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A29040CL-70F PDF预览

A29040CL-70F

更新时间: 2024-02-23 08:46:15
品牌 Logo 应用领域
联笙电子 - AMICC 内存集成电路
页数 文件大小 规格书
28页 343K
描述
Flash, 512KX8, 70ns, PQCC32, ROHS COMPLIANT, PLASTIC, LCC-32

A29040CL-70F 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:End Of Life零件包装代码:QFJ
包装说明:QCCJ,针数:32
Reach Compliance Code:unknown风险等级:5.58
最长访问时间:70 nsJESD-30 代码:R-PQCC-J32
长度:13.97 mm内存密度:4194304 bit
内存集成电路类型:FLASH内存宽度:8
功能数量:1端子数量:32
字数:524288 words字数代码:512000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:512KX8
封装主体材料:PLASTIC/EPOXY封装代码:QCCJ
封装形状:RECTANGULAR封装形式:CHIP CARRIER
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
编程电压:5 V座面最大高度:3.4 mm
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子形式:J BEND端子节距:1.27 mm
端子位置:QUAD处于峰值回流温度下的最长时间:NOT SPECIFIED
类型:NOR TYPE宽度:11.43 mm
Base Number Matches:1

A29040CL-70F 数据手册

 浏览型号A29040CL-70F的Datasheet PDF文件第6页浏览型号A29040CL-70F的Datasheet PDF文件第7页浏览型号A29040CL-70F的Datasheet PDF文件第8页浏览型号A29040CL-70F的Datasheet PDF文件第10页浏览型号A29040CL-70F的Datasheet PDF文件第11页浏览型号A29040CL-70F的Datasheet PDF文件第12页 
A29040C Series  
Once the sector erase operation has begun, only the Erase  
Suspend command is valid. All other commands are  
ignored.  
Chip Erase Command Sequence  
Chip erase is a six-bus-cycle operation. The chip erase  
command sequence is initiated by writing two unlock cycles,  
followed by a set-up command. Two additional unlock write  
cycles are then followed by the chip erase command, which  
in turn invokes the Embedded Erase algorithm. The device  
does not require the system to preprogram prior to erase.  
The Embedded Erase algorithm automatically preprograms  
and verifies the entire memory for an all zero data pattern  
prior to electrical erase. The system is not required to  
provide any controls or timings during these operations. The  
Command Definitions table shows the address and data  
requirements for the chip erase command sequence.  
Any commands written to the chip during the Embedded  
Erase algorithm are ignored. The system can determine the  
status of the erase operation by using I/O7, I/O6, or I/O2. See  
"Write Operation Status" for information on these status bits.  
When the Embedded Erase algorithm is complete, the  
device returns to reading array data and addresses are no  
longer latched.  
When the Embedded Erase algorithm is complete, the  
device returns to reading array data and addresses are no  
longer latched. The system can determine the status of the  
erase operation by using I/O7, I/O6, or I/O2. Refer to "Write  
Operation Status" for information on these status bits.  
Figure 2 illustrates the algorithm for the erase operation.  
Refer to the Erase/Program Operations tables in the "AC  
Characteristics" section for parameters, and to the Sector  
Erase Operations Timing diagram for timing waveforms.  
Erase Suspend/Erase Resume Commands  
The Erase Suspend command allows the system to interrupt  
a sector erase operation and then read data from, or  
program data to, any sector not selected for erasure. This  
command is valid only during the sector erase operation,  
including the 50μs time-out period during the sector erase  
command sequence. The Erase Suspend command is  
ignored if written during the chip erase operation or  
Embedded Program algorithm. Writing the Erase Suspend  
command during the Sector Erase time-out immediately  
terminates the time-out period and suspends the erase  
operation. Addresses are "don't cares" when writing the  
Erase Suspend command.  
Figure 2 illustrates the algorithm for the erase operation. See  
the Erase/Program Operations tables in "AC Characteristics"  
for parameters, and to the Chip/Sector Erase Operation  
Timings for timing waveforms.  
Sector Erase Command Sequence  
When the Erase Suspend command is written during a  
sector erase operation, the device requires a maximum of  
30μs to suspend the erase operation. However, when the  
Erase Suspend command is written during the sector erase  
time-out, the device immediately terminates the time-out  
period and suspends the erase operation.  
After the erase operation has been suspended, the system  
can read array data from or program data to any sector not  
selected for erasure. (The device "erase suspends" all  
sectors selected for erasure.) Normal read and write timings  
and command definitions apply. Reading at any address  
within erase-suspended sectors produces status data on  
I/O7 - I/O0. The system can use I/O7, or I/O6 and I/O2  
together, to determine if a sector is actively erasing or is  
erase-suspended. See "Write Operation Status" for  
information on these status bits.  
After an erase-suspended program operation is complete,  
the system can once again read array data within non-  
suspended sectors. The system can determine the status of  
the program operation using the I/O7 or I/O6 status bits, just  
as in the standard program operation. See "Write Operation  
Status" for more information.  
The system may also write the autoselect command  
sequence when the device is in the Erase Suspend mode.  
The device allows reading autoselect codes even at  
addresses within erasing sectors, since the codes are not  
stored in the memory array. When the device exits the  
autoselect mode, the device reverts to the Erase Suspend  
mode, and is ready for another valid operation. See  
"Autoselect Command Sequence" for more information.  
The system must write the Erase Resume command  
(address bits are "don't care") to exit the erase suspend  
mode and continue the sector erase operation. Further  
writes of the Resume command are ignored. Another Erase  
Suspend command can be written after the device has  
resumed erasing.  
Sector erase is a six-bus-cycle operation. The sector erase  
command sequence is initiated by writing two unlock cycles,  
followed by a set-up command. Two additional unlock write  
cycles are then followed by the address of the sector to be  
erased, and the sector erase command. The Command  
Definitions table shows the address and data requirements  
for the sector erase command sequence.  
The device does not require the system to preprogram the  
memory prior to erase. The Embedded Erase algorithm  
automatically programs and verifies the sector for an all zero  
data pattern prior to electrical erase. The system is not  
required to provide any controls or timings during these  
operations.  
After the command sequence is written, a sector erase time-  
out of 50μs begins. During the time-out period, additional  
sector addresses and sector erase commands may be  
written. Loading the sector erase buffer may be done in any  
sequence, and the number of sectors may be from one  
sector to all sectors. The time between these additional  
cycles must be less than 50μs, otherwise the last address  
and command might not be accepted, and erasure may  
begin. It is recommended that processor interrupts be  
disabled during this time to ensure all commands are  
accepted. The interrupts can be re-enabled after the last  
Sector Erase command is written. If the time between  
additional sector erase commands can be assumed to be  
less than 50μs, the system need not monitor I/O3. Any  
command other than Sector Erase or Erase Suspend during  
the time-out period resets the device to reading array data.  
The system must rewrite the command sequence and any  
additional sector addresses and commands.  
The system can monitor I/O3 to determine if the sector erase  
timer has timed out. (See the " I/O3: Sector Erase Timer"  
section.) The time-out begins from the rising edge of the final  
pulse in the command sequence.  
WE  
PRELIMINARY (May, 2013, Version 0.0)  
8
AMIC Technology, Corp.  

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