Datasheet > A1C15S12M3

A1C15S12M3

更新时间： 2023-12-20 18:43:59

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		栅双极性晶体管二极管
页数	文件大小	规格书
19页	819K
描述
ACEPACK 1整流逆变制动1200 V、15 A沟槽栅场截止IGBT M系列，软二极管和NTC

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A1C15S12M3 数据手册

A1C15S12M3

Inverter stage

Symbol

Parameter

Turn-on delay time

Test conditions

Min. Typ. Max. Unit

122

µs

d(on)

= 600 V, I = 15 A, R = 22 Ω,

C G

Current rise time

= ±15 V, di/dt = 690 A/µs, T = 150 °C

(1)

Turn-on switching energy

Turn-off delay time

1.08

122

146

1.06

d(off)

= 600 V, I = 15 A, R = 22 Ω,

C G

Current fall time

= ±15 V,dv/dt = 7000 V/µs, T = 150 °C

(2)

Turn-off switching energy

Short-circuit withstand time

Thermal resistance junction-to-case

Thermal resistance case-to-heatsink

off

≤ 600V, V ≤ 15 V, T

≤ 150 °C

Jstart

THj-c

Each IGBT

0.95 1.05 °C/W

THc-h

Each IGBT, λ

= 1 W/(m·°C)

grease

0.90

°C/W

1. Including the reverse recovery of the diode.

2. Including the tail of the collector current.

DS11631 - Rev 7

page 3/19

1 234 5 6 7...19

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