Datasheet > A160CB10VI

A160CB10VI

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
超微 - AMD		闪存
页数	文件大小	规格书
52页	1031K
描述
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory

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A160CB10VI 数据手册

DATA SHEET

Am29SL160C

16 Megabit (2 M x 8-Bit/1 M x 16-Bit)

CMOS 1.8 Volt-only Super Low Voltage Flash Memory

DISTINCTIVE CHARACTERISTICS

ARCHITECTURAL ADVANTAGES

SOFTWARE FEATURES

■

Secured Silicon (SecSi) Sector: 256-byte sector

■

Supports Common Flash Memory Interface (CFI)

— Factory locked and identifiable: 16 bytes available for

secure, random factory Electronic Serial Number;

verifiable as factory locked through autoselect

function. ExpressFlash option allows entire sector to

be available for factory-secured data

■

Erase Suspend/Erase Resume

— Suspends erase operations to allow programming in

same bank

■

Data# Polling and Toggle Bits

— Provides a software method of detecting the status of

program or erase cycles

— Customer lockable: Customer may program own

custom data. Once locked, data cannot be changed

Unlock Bypass Program command

— Reduces overall programming time when issuing

multiple program command sequences

■

Zero Power Operation

— Sophisticated power management circuits reduce

power consumed during inactive periods to nearly

zero

HARDWARE FEATURES

Package options

— 48-ball FBGA

— 48-pin TSOP

■

Any combination of sectors can be erased

■

Ready/Busy# output (RY/BY#)

— Hardware method for detecting program or erase

cycle completion

■

Top or bottom boot block

Manufactured on 0.32 µm process technology

Compatible with JEDEC standards

■

Hardware reset pin (RESET#)

— Hardware method of resetting the internal state

machine to reading array data

— Pinout and software compatible with single-power-

supply flash standard

WP#/ACC input pin

— Write protect (WP#) function allows protection of two

outermost boot sectors, regardless of sector protect status

PERFORMANCE CHARACTERISTICS

■

High performance

— Access time as fast 100 ns

— Acceleration (ACC) function accelerates program

timing

— Program time: 8 µs/word typical using Accelerate

■

Sector protection

— Hardware method of locking a sector, either in-

system or using programming equipment, to prevent

any program or erase operation within that sector

■

Ultra low power consumption (typical values)

— 1 mA active read current at 1 MHz

— 5 mA active read current at 5 MHz

— Temporary Sector Unprotect allows changing data in

protected sectors in-system

— 1 µA in standby or automatic sleep mode

■

Minimum 1 million erase cycles guaranteed per

sector

20 Year data retention at 125°C

— Reliable operation for the life of the system

Publication# 21635 Rev: C Amendment/5

Issue Date: January 23, 2007

This Data Sheet states AMD’s current specifications regarding the Products described herein. This Data Sheet may

be revised by subsequent versions or modifications due to changes in technical specifications.

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与A160CB10VI相关器件

型号	品牌	描述	获取价格	数据表
A160CB12VC	AMD	16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory	获取价格
A160CB12VD	AMD	16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory	获取价格
A160CB12VF	AMD	16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory	获取价格
A160CB12VI	AMD	16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory	获取价格
A160CB15VC	AMD	16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory	获取价格
A160CB15VD	AMD	16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory	获取价格

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