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A1125ELHLX-T

更新时间： 2024-02-29 05:36:45

品牌	Logo	应用领域
急速微 - ALLEGRO		开关传感器换能器磁场传感器输出元件信息通信管理
页数	文件大小	规格书
9页	230K
描述
Chopper Stabilized Precision Hall Effect Switches

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技术参数
数据手册

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A1125ELHLX-T 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	零件包装代码：	SIP
包装说明：	SIP3,.02,50	针数：	3
Reach Compliance Code：	compliant	HTS代码：	8542.39.00.01
风险等级：	0.65	Is Samacsys：	N
其他特性：	AEC-Q100; SHORT CIRCUIT PROTECTION	主体宽度：	1.52 mm
主体高度：	4.12 mm	主体长度或直径：	4.09 mm
外壳：	PLASTIC	滞后：	1 mT
输入模式：	UNIPOLAR	JESD-609代码：	e3
最大磁场范围：	5 mT	最小磁场范围：	0.5 mT
安装特点：	THROUGH HOLE MOUNT	端子数量：	3
最大工作电流：	4 mA	最高工作温度：	150 °C
最低工作温度：	-40 °C	输出：	OPEN-DRAIN
输出电路类型：	TRANSISTOR	最大输出电流：	60 mA
输出范围：	30-60mA	输出类型：	CURRENT OUTPUT
封装主体材料：	PLASTIC/EPOXY	封装等效代码：	SIP3,.02,50
封装形状/形式：	RECTANGULAR	筛选级别：	AEC-Q100
传感器/换能器类型：	MAGNETIC FIELD SENSOR,HALL EFFECT	最大供电电压：	24 V
最小供电电压：	3 V	表面贴装：	NO
技术：	BICMOS	端子面层：	Matte Tin (Sn)
端接类型：	SOLDER	Base Number Matches：	1

A1125ELHLX-T 数据手册

A1120 and

A1125

Chopper Stabilized Precision Hall Effect Switches

A worst-case estimate, P_D(max), represents the maximum allow-

Power Derating

able power level (V_CC(max), I_CC(max)), without exceeding T_J(max)

at a selected R_JAand T_A.

The device must be operated below the maximum junction

temperature of the device, T_J(max). Under certain combinations of

peak conditions, reliable operation may require derating supplied

power or improving the heat dissipation properties of the appli-

cation. This section presents a procedure for correlating factors

affecting operating T_J. (Thermal data is also available on the

Allegro MicroSystems website.)

Example: Reliability for V_CCat T_A=150°C, package LH, using a

minimum-K PCB.

Observe the worst-case ratings for the device, specifically:

R_JA=228°C/W, T_J(max) =165°C, V_CC(max) = 24 V, and

I_CC(max) = 4 mA.

The Package Thermal Resistance, R_JA, is a figure of merit sum-

marizing the ability of the application and the device to dissipate

heat from the junction (die), through all paths to the ambient air.

Its primary component is the Effective Thermal Conductivity, K,

of the printed circuit board, including adjacent devices and traces.

Radiation from the die through the device case, R_JC, is relatively

small component of R_JA. Ambient air temperature, T_A, and air

motion are significant external factors, damped by overmolding.

Calculate the maximum allowable power level, P_D(max). First,

invert equation 3:

T_max= T_J(max) – T_A= 165°C–150°C = 15°C

This provides the allowable increase to T_Jresulting from internal

power dissipation. Then, invert equation 2:

P_D(max) = T_max÷R_JA=15°C÷228 °C/W=66mW

The effect of varying power levels (Power Dissipation, P_D), can

be estimated. The following formulas represent the fundamental

relationships used to estimate T_J, at P_D.

Finally, invert equation 1 with respect to voltage:

V_CC(est)= P_D(max) ÷ I_CC(max)= 66mW÷4mA=16.5 V

P_D= V_IN

(1)

(2)

(3)

The result indicates that, at T_A, the application and device can

dissipate adequate amounts of heat at voltages ≤V_CC(est)



T = P_D

JA

Compare V_CC(est)to V_CC(max). If V_CC(est)≤ V_CC(max), then reli-

able operation between V_CC(est)and V_CC(max) requires enhanced

R_JA. If V_CC(est)≥ V_CC(max), then operation between V_CC(est)

and V_CC(max) is reliable under these conditions.

T_J= T_A+ ΔT

For example, given common conditions such as: T_A= 25°C,

V_CC= 12 V, I_CC= 1.6 mA, and R_JA= 165 °C/W, then:

P_D= V_CC

= 12 V 1.6 mA = 19 mW



T = P_D

= 19 mW 165 °C/W = 3°C

JA

T_J= T_A+ T = 25°C + 3°C = 28°C

Allegro MicroSystems, Inc.

115 Northeast Cutoff

Worcester, Massachusetts 01615-0036 U.S.A.

1.508.853.5000; www.allegromicro.com

1...4 5 678 9

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