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A1106LLTTR-T

更新时间: 2024-01-20 05:41:09
品牌 Logo 应用领域
急速微 - ALLEGRO 信息通信管理
页数 文件大小 规格书
13页 635K
描述
Analog Circuit, 1 Func, BICMOS, PSSO3, SOT-89, 3 PIN

A1106LLTTR-T 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:compliant
HTS代码:8542.39.00.01风险等级:5.57
模拟集成电路 - 其他类型:ANALOG CIRCUITJESD-30 代码:R-PSSO-F3
功能数量:1端子数量:3
最高工作温度:150 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, HEAT SINK/SLUG峰值回流温度(摄氏度):NOT SPECIFIED
最大供电电压 (Vsup):24 V最小供电电压 (Vsup):3.8 V
表面贴装:YES技术:BICMOS
温度等级:AUTOMOTIVE端子形式:FLAT
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

A1106LLTTR-T 数据手册

 浏览型号A1106LLTTR-T的Datasheet PDF文件第6页浏览型号A1106LLTTR-T的Datasheet PDF文件第7页浏览型号A1106LLTTR-T的Datasheet PDF文件第8页浏览型号A1106LLTTR-T的Datasheet PDF文件第10页浏览型号A1106LLTTR-T的Datasheet PDF文件第11页浏览型号A1106LLTTR-T的Datasheet PDF文件第12页 
A1101, A1102, A1103,  
A1104, and A1106  
Continuous-Time Switch Family  
POWER DERATING  
A worst-case estimate, PD(max), represents the maximum allow-  
able power level (VCC(max), ICC(max)), without exceeding TJ(max)  
at a selected RθJA and TA.  
Power Derating  
,
The device must be operated below the maximum junction  
temperature of the device, TJ(max). Under certain combinations of  
peak conditions, reliable operation may require derating supplied  
power or improving the heat dissipation properties of the appli-  
cation. This section presents a procedure for correlating factors  
affecting operating TJ. (Thermal data is also available on the  
Allegro MicroSystems Web site.)  
Example: Reliability for VCC at TA=150°C, package UA, using  
minimum-K PCB.  
Observe the worst-case ratings for the device, specifically:  
RθJA=165°C/W, TJ(max) =165°C, VCC(max)= 24 V, and  
ICC(max) = 7.5 mA.  
The Package Thermal Resistance, RθJA, is a figure of merit sum-  
marizing the ability of the application and the device to dissipate  
heat from the junction (die), through all paths to the ambient air.  
Its primary component is the Effective Thermal Conductivity, K,  
of the printed circuit board, including adjacent devices and traces.  
Radiation from the die through the device case, RθJC, is relatively  
small component of RθJA. Ambient air temperature, TA, and air  
motion are significant external factors, damped by overmolding.  
Calculate the maximum allowable power level, PD(max). First,  
invert equation 3:  
ΔTmax = TJ(max) – TA = 165°C150°C = 15°C  
This provides the allowable increase to TJ resulting from internal  
power dissipation. Then, invert equation 2:  
PD(max) = ΔTmax ÷RθJA =1C÷165 °C/W=91mW  
The effect of varying power levels (Power Dissipation, PD), can  
be estimated. The following formulas represent the fundamental  
relationships used to estimate TJ, at PD.  
Finally, invert equation 1 with respect to voltage:  
VCC(est) = PD(max) ÷ ICC(max) = 91mW÷7.5mA=12.1 V  
The result indicates that, at TA, the application and device can dis-  
PD = VIN  
I
(1)  
×
IN  
sipate adequate amounts of heat at voltages ≤VCC(est)  
.
ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀΔT = PD  
R
(2)  
×
θJA  
Compare VCC(est) to VCC(max). If VCC(est) ≤ VCC(max), then reli-  
able operation between VCC(est) and VCC(max) requires enhanced  
RθJA. If VCC(est) ≥ VCC(max), then operation between VCC(est) and  
VCC(max) is reliable under these conditions.  
TJ = TA + ΔT  
(3)  
For example, given common conditions such as: TA= 25°C,  
VCC = 12 V, ICC = 4 mA, and RθJA = 140 °C/W, then:  
PD = VCC  
I
= 12 V 4 mA = 48 mW  
CC  
×
×
ΔT = PD  
R
= 48 mW 140 °C/W = 7°C  
θJA  
×
×
TJ = TA + ΔT = 25°C + 7°C = 32°C  
Allegro MicroSystems, LLC  
115 Northeast Cutoff  
9
Worcester, Massachusetts 01615-0036 U.S.A.  
1.508.853.5000; www.allegromicro.com  

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