Datasheet > TIM3742-16L

TIM3742-16L

更新时间： 2024-01-22 04:55:12

品牌	Logo	应用领域
东芝 - TOSHIBA		局域网晶体管
页数	文件大小	规格书
5页	288K
描述
TRANSISTOR C BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, 2-16G1B, 3 PIN, FET RF Power

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技术参数
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TIM3742-16L 技术参数

是否无铅：	含铅	是否Rohs认证：	不符合
生命周期：	Obsolete	包装说明：	FLANGE MOUNT, R-CDFM-F2
针数：	3	Reach Compliance Code：	unknown
ECCN代码：	EAR99	风险等级：	5.57
外壳连接：	SOURCE	配置：	SINGLE
最小漏源击穿电压：	15 V	最大漏极电流 (Abs) (ID)：	16 A
最大漏极电流 (ID)：	16 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
最高频带：	C BAND	JESD-30 代码：	R-CDFM-F2
元件数量：	1	端子数量：	2
工作模式：	DEPLETION MODE	最高工作温度：	175 °C
封装主体材料：	CERAMIC, METAL-SEALED COFIRED	封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT	峰值回流温度（摄氏度）：	240
极性/信道类型：	N-CHANNEL	功耗环境最大值：	70 W
认证状态：	Not Qualified	子类别：	Other Transistors
表面贴装：	YES	端子形式：	FLAT
端子位置：	DUAL	处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管元件材料：	GALLIUM ARSENIDE	Base Number Matches：	1

TIM3742-16L 数据手册

TOSHIBA

MICROWAVE POWER GaAs FET

TIM3742-16L

Low Distortion Internally Matched Power GaAs FETs (C-Band)

Features

• Low intermodulation distortion

- IM = -44 dBc at Po = 31.5 dBm,

- Single carrier level

• High power

- P

= 42.5 dBm at 3.7 GHz to 4.2 GHz

1dB

• High gain

- G = 9.0 dB at 3.7 GHz to 4.2 GHz

1dB

• Broad band internally matched

• Hermetically sealed package

RF Performance Speciﬁcations (Ta = 25° C)

Characteristics

Output Power at 1dB

Symbol

Condition

Unit

Min.

Typ.

Max

dBm

41.5

42.5

–

1dB

Compression Point

Power Gain at 1dB

Compression Point

8.0

9.0

1dB

= 10V

f = 3.7 ~ 4.2 GHz

Drain Current

–

4.8

–

5.5

±0.8

–

DS1

Gain Flatness

∆G

Power Added Efﬁciency

3rd Order Intermodulation Distortion

Drain Current

–

-44

4.8

–

add

dBc

-41

–

Note 1

5.5

DS2

Channel-Temperature Rise

∆T

xI xR (c-c)

°C

–

DS DS

Electrical Characteristics (Ta = 25° C)

Characteristic

Trans-conductance

Symbol

Condition

Unit

Min.

Typ.

Max

= 3V

–

3600

-3.5

–

= 6.0A

= 3V

Pinch-off Voltage

-2

-5.0

GSoff

DSS

= 80mA

= 3V

= 0V

Saturated Drain Current

Gate-Source Breakdown Voltage

Thermal Resistance

–

-5

–

11.6

–

15.0

–

= -240µA

GSO

Channel

to case

°C/W

1.4

1.8

th (c-c)

Note 1: 2 tone Test Pout = 31.5dBm Single Carrier Level.

The information contained here is subject to change without notice.

The information contained herein is presented only as guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties

which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. These TOSHIBA products are intended for usage in general electronic

equipments (ofﬁce equipment, communication equipment, measuring equipment, domestic electriﬁcation, etc.) Please make sure that you consult with us before you use these TOSHIBA products in equip-

ments which require high quality and/or reliability, and in equipments which could have major impact to the welfare of human life (atomic energy control, spaceship, trafﬁc signal, combustion control, all types

of safety devices, etc.). TOSHIBA cannot accept liability to any damage which may occur in case these TOSHIBA products were used in the mentioned equipments without prior consultation with TOSHIBA.

TOSHIBA CORPORATION

MW50470196

1/5

12 3 4 5

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与TIM3742-16L相关器件

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TIM3742-16SL	TOSHIBA	MICRO WAVE POWER GaAs FET	获取价格
TIM3742-16SL-341	TOSHIBA	MICROWAVE POWER GaAs FET	获取价格
TIM3742-16UL	TOSHIBA	HIGH POWER P1dB=42.5dBm at 3.7GHz to 4.2GHz	获取价格
TIM3742-25UL	TOSHIBA	MICROWAVE POWER GaAs FET	获取价格
TIM3742-30SL	TOSHIBA	TRANSISTOR S BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 2-16G1B, 2 PIN, FET	获取价格
TIM3742-30SL_07	TOSHIBA	IM3=-45 dBc at Po= 34.5 dBm, Single Carrier Level	获取价格

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