2N7002KW

更新时间： 2024-01-23 00:39:26

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管开关光电二极管 PC
页数	文件大小	规格书
6页	291K
描述
N-Channel Enhancement Mode Field Effect Transistor

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技术参数
数据手册

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2N7002KW 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	5.55	Is Samacsys：	N
湿度敏感等级：	1	峰值回流温度（摄氏度）：	260
处于峰值回流温度下的最长时间：	10	Base Number Matches：	1

2N7002KW 数据手册

May 2011

2N7002KW

N-Channel Enhancement Mode Field Effect Transistor

Features

• Low On-Resistance

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Ultra-Small Surface Mount Package

• Pb Free/RoHS Compliant

• ESD HBM=1000V as per JESD22 A114 and ESD CDM=1500V as per JESD22 C101

SOT-323

Marking : 7KW

Absolute Maximum Ratings * T_A= 25°C unless otherwise noted

Symbol

V_DSS

V_GSS

I_D

Parameter

Drain-Source Voltage

Value

Units

Gate-Source Voltage

±20

Maximum Drain Current

- Continuous

T_J= 100°C

- Pulsed

310

195

1.2

T_J

Operating Junction Temperature Range

Storage Temperature Range

-55 to +150

°C

T_STG

* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.

Thermal Characteristics

Symbol

Parameter

Total Device Dissipation

Derating above T_A= 25°C

Value

Units

P_D

300

2.4

mW/°C

R_θJA

Thermal Resistance, Junction to Ambient *

410

°C/W

* Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimum land pad size

www.fairchildsemi.com

2N7002KW Rev. A0

12 3 4 5 6

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