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97SD3248BRPQK PDF预览

97SD3248BRPQK

更新时间: 2024-01-16 23:58:57
品牌 Logo 应用领域
麦斯威 - MAXWELL 动态存储器内存集成电路
页数 文件大小 规格书
40页 501K
描述
Synchronous DRAM, 32MX48, 6ns, CMOS, PQFP132, QFP-132

97SD3248BRPQK 技术参数

生命周期:Transferred包装说明:QFF,
Reach Compliance Code:unknown风险等级:5.7
访问模式:FOUR BANK PAGE BURST最长访问时间:6 ns
其他特性:AUTO/SELF REFRESHJESD-30 代码:S-PQFP-F132
长度:34.29 mm内存密度:1610612736 bit
内存集成电路类型:SYNCHRONOUS DRAM内存宽度:48
功能数量:1端口数量:1
端子数量:132字数:33554432 words
字数代码:32000000工作模式:SYNCHRONOUS
最高工作温度:125 °C最低工作温度:-55 °C
组织:32MX48封装主体材料:PLASTIC/EPOXY
封装代码:QFF封装形状:SQUARE
封装形式:FLATPACK座面最大高度:9.7028 mm
自我刷新:YES最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):3 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:MILITARY端子形式:FLAT
端子节距:0.635 mm端子位置:QUAD
总剂量:100k Rad(Si) V宽度:34.29 mm
Base Number Matches:1

97SD3248BRPQK 数据手册

 浏览型号97SD3248BRPQK的Datasheet PDF文件第4页浏览型号97SD3248BRPQK的Datasheet PDF文件第5页浏览型号97SD3248BRPQK的Datasheet PDF文件第6页浏览型号97SD3248BRPQK的Datasheet PDF文件第8页浏览型号97SD3248BRPQK的Datasheet PDF文件第9页浏览型号97SD3248BRPQK的Datasheet PDF文件第10页 
97SD3248B  
1.5Gb (8-Meg X 48-Bit X 4-Banks) SDRAM  
Pin Functions:  
CLK (INPUT PIN): CLK is the master clock input to this pin. The other input signals are referred at CLK rising  
edge.  
CS 1-6 (INPUT PINS): When CS 1-6 are low, the command input cycle becomes valid. When CS 1-6 are High,  
all inputs are ignored. However, internal operations (bank active, burst operations, etc.) are held.  
RAS, CAS AND WE (INPUT PINS): Although these pin names are the same as those of conventional DRAMs,  
they function in a different way. These pins define operation commands (read, write, etc.) depending on the  
combination of their voltage levels.  
A0 TO A12 (INPUT PINS): Row address (AX0 to AX12) is determined by A0 to A12 level at the bank active  
command cycle CLK rising edge. Column address (AY0 to AY9) is determined by A0 to A9 level at the read  
or write command cycle CLK rising edge. And this column address becomes burst access start address.  
A10 defines the precharge mode. When A10 = High at the precharge command cycle, all banks are pre-  
charged. But when A10 = Low at the precharge command cycle, only the bank that is selected by BA0/BA1  
(BS) is pre charged.  
BA0/BA1 (INPUT PINS): BA0/BA1 are bank select signals (BS). The memory array of the 97SD3248 is divided  
into bank 0, bank 1, bank 2 and bank 3. The 97SD3248B contains 8192-row X 1024-column X 48-bit. If BA0  
and BA1 is Low, bank 0 is selected. If BA0 is Low and BA1 is High, bank 1 is selected. If BA0 is High and  
BA1 is Low, bank 2 is selected. If BAO is High and BA1 is High, bank 3 is selected.  
CKE (INPUT PIN): This pin determines whether or not the next CLK is valid. If CKE is High, the next CLK rising  
edge is valid. If CKE is Low, the next CLK rising edge is invalid. This pin is used for power-down mode,  
clock suspend mode and self refresh mode1.  
DQM 1-6 (INPUT PINS): DQM 1-6 control input/output buffers  
Read operation: If DQM 1-6 are High, the output buffer becomes High-Z. If the DQM 1-6 are Low, the output  
buffer becomes Low-Z. ( The latency of DQM 1-6 during reading is 2 clock cycles.)  
Write operation: If DQM 1-6 are High, the previous data is held ( the new data is not written). If the DQM 1-6  
areLow, the data is written. ( The latency of DQM 1-6 during writing is 0 clock cycles.)  
DQ0 TO DQ47 (DQ PINS): Data is input to and output from these pins ( DQ0 to DQ47).  
VCC AND VCCQ (POWER SUPPLY PINS): 3.3V is applied. ( VCC is for the internal circuit and VCCQ is for the output  
buffer.)  
VSS AND VSSQ (POWER SUPPLY PINS): Ground is connected. (VSS is for the internal circuit and VSSQ is for the  
output buffer.)  
1. Self refresh mode should only be used at temperatures below 70°C.  
08.21.2013 Rev 2  
All data sheets are subject to change without notice  
7
©2013 Maxwell Technologies  
All rights reserved.  

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