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93LC56A/P PDF预览

93LC56A/P

更新时间: 2024-02-29 05:02:28
品牌 Logo 应用领域
美国微芯 - MICROCHIP 存储内存集成电路微波光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟
页数 文件大小 规格书
12页 163K
描述
2K 2.5V Microwave Serial EEPROM

93LC56A/P 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Not Recommended零件包装代码:SOIC
包装说明:0.150 INCH, PLASTIC, SOIC-8针数:8
Reach Compliance Code:compliant风险等级:5.17
Is Samacsys:N其他特性:100K ERASE/WRITE CYCLES MIN; DATA RETENTION > 40 YEARS
备用内存宽度:8最大时钟频率 (fCLK):2 MHz
数据保留时间-最小值:200耐久性:10000000 Write/Erase Cycles
JESD-30 代码:R-PDSO-G8JESD-609代码:e3
长度:4.9 mm内存密度:2048 bit
内存集成电路类型:EEPROM内存宽度:16
湿度敏感等级:1功能数量:1
端子数量:8字数:128 words
字数代码:128工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:128X16输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装等效代码:SOP8,.25封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:SERIAL
峰值回流温度(摄氏度):260电源:3/5 V
认证状态:Not Qualified座面最大高度:1.75 mm
串行总线类型:MICROWIRE最大待机电流:0.00003 A
子类别:EEPROMs最大压摆率:0.003 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):2.5 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:40宽度:3.9 mm
最长写入周期时间 (tWC):10 ms写保护:SOFTWARE
Base Number Matches:1

93LC56A/P 数据手册

 浏览型号93LC56A/P的Datasheet PDF文件第4页浏览型号93LC56A/P的Datasheet PDF文件第5页浏览型号93LC56A/P的Datasheet PDF文件第6页浏览型号93LC56A/P的Datasheet PDF文件第8页浏览型号93LC56A/P的Datasheet PDF文件第9页浏览型号93LC56A/P的Datasheet PDF文件第10页 
93LC56A/B  
3.8  
WRITE  
3.9  
Write All (WRAL)  
The WRITE instruction is followed by 8 bits (93LC56A)  
or 16 bits (93LC56B) of data which are written into the  
specified address. After the last data bit is put on the DI  
pin, the falling edge of CS initiates the self-timed auto-  
erase and programming cycle.  
The Write All (WRAL) instruction will write the entire  
memory array with the data specified in the command.  
The WRAL cycle is completely self-timed and com-  
mences at the falling edge of the CS. Clocking of the  
CLK pin is not necessary after the device has entered  
the WRAL cycle.The WRAL command does include an  
automatic ERAL cycle for the device. Therefore, the  
WRAL instruction does not require an ERAL instruction  
but the chip must be in the EWEN status.  
The DO pin indicates the READY/BUSY status of the  
device if CS is brought high after a minimum of 250 ns  
low (TCSL) and before the entire write cycle is complete.  
DO at logical “0” indicates that programming is still in  
progress. DO at logical “1” indicates that the register at  
the specified address has been written with the data  
specified and the device is ready for another instruc-  
tion.  
The DO pin indicates the READY/BUSY status of the  
device if CS is brought high after a minimum of 250 ns  
low (TCSL).  
FIGURE 3-7: WRITE TIMING  
TCSL  
CS  
CLK  
0
1
1
An  
A0  
Dx  
D0  
•••  
•••  
DI  
TSV  
TCZ  
HIGH-Z  
BUSY  
READY  
DO  
HIGH-Z  
Twc  
FIGURE 3-8: WRAL TIMING  
TCSL  
CS  
CLK  
0
0
1
X
1
0
•••  
Dx  
•••  
DI  
X
D0  
TSV  
TCZ  
HIGH-Z  
BUSY  
READY  
DO  
HIGH-Z  
TWL  
Guaranteed at Vcc = 4.5V to +6.0V.  
1997 Microchip Technology Inc.  
Preliminary  
DS21208A-page 7  

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