Datasheet > 933372970653

933372970653

更新时间： 2024-01-08 23:01:39

品牌	Logo	应用领域
恩智浦 - NXP		光电二极管
页数	文件大小	规格书
8页	85K
描述
SPST, 4 Func, 1 Channel, CMOS, PDSO14

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933372970653 数据手册

Philips Semiconductors

Product speciﬁcation

HEF4066B

gates

Quadruple bilateral switches

RATINGS

Limiting values in accordance with the Absolute Maximum System (IEC 134)

Power dissipation per switch

max. 100 mW

For other RATINGS see Family Speciﬁcations

DC CHARACTERISTICS

T_amb= 25 °C

V_DD

SYMBOL MIN. TYP. MAX.

CONDITIONS

E_nat V_DD

−

350 2500 Ω

ON resistance

R_ON

∆R_ON

I_OZ

245 Ω

175 Ω

340 Ω

160 Ω

115 Ω

365 Ω

200 Ω

155 Ω

V_is= V_SSto V_DD

see Fig.4

115

E_nat V_DD

V_is= V_SS

see Fig.4

120

E_nat V_DD

V_is= V_DD

see Fig.4

‘∆’ ON resistance

between any two

channels

−

Ω

E_nat V_DD

Ω

V_is= V_SSto V_DD

see Fig.4

Ω

OFF state leakage

current, any

−

E_nat V_SS

channel OFF

E_ninput voltage

LOW

−

200 nA

1 V

2,25

4,50

6,75

I_is= 10 µA

see Fig.9

V_IL

2 V

V_DD

SYMBOL

T_amb(°c)

CONDITIONS

−40

+25

+85

MAX. MAX. MAX.

Quiescent device

current

1,0

2,0

4,0

−

1,0

2,0

4,0

7,5 µA

15,0 µA

30,0 µA

V_SS= 0; all valid

input combinations;

V_I= V_SSor V_DD

E_nat V_SSor V_DD

I_DD

Input leakage current at E_n

± I_IN

300 1000 nA

January 1995

1 234 5 6 7 8

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