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9013XLT1 PDF预览

9013XLT1

更新时间: 2022-05-18 00:56:50
品牌 Logo 应用领域
威伦 - WILLAS 晶体晶体管
页数 文件大小 规格书
2页 282K
描述
General Purpose Transistors

9013XLT1 数据手册

 浏览型号9013XLT1的Datasheet PDF文件第2页 
WILLAS  
9013xLT1  
General Purpose Transistors  
NPN Silicon  
FEATURE  
We declare that the material of product compliance with RoHS requirements.  
Pb-Free package is available  
RoHS product for packing code suffix ”G”  
Halogen free product for packing code suffix “H”  
DEVICE MARKING AND ORDERING INFORMATION  
SOT-23  
Device  
Marking  
Shipping  
9013PLT1  
9013Q LT1  
13P  
3000/Tape&Reel  
3000/Tape&Reel  
13Q  
9013RLT1  
9013SLT1  
13R  
13S  
3000/Tape&Reel  
3000/Tape&Reel  
3
MAXIMUM RATINGS  
Rating  
COLLECTOR  
Symbol  
Value  
U
1
Collector-Emitter Voltage  
VCEO  
VCBO  
VEBO  
IC  
20  
BASE  
Collector-Base Voltage  
Emitter-Base Voltage  
40  
5
2
EMITTER  
Collector current-continuoun  
mAdc  
THERMAL CHARATEERISTICS  
Characteristic  
bo
Max  
Unit  
Total Device Dissipation FR-5 Board,
TA=25oC  
225  
mW  
Derate above 25oC  
1.8  
mW/oC  
oC/W  
Thermal Resistance, Junction to Ant  
R
556  
q JA  
Total Device Dissipation  
PD  
Alumina Substrate, (2) TA=25 oC  
Derate above 25oC  
300  
2.4  
mW  
mW/oC  
oC/W  
oC  
Thermal Resistance, Junction to Ambient  
Junction and Storage Temperature  
DEVICE MARKING  
R
417  
qJA  
Tj ,Tstg  
-55 to +150  
9013QLT1=13Q  
9013RLT1=13R  
9013SLT1=13S  
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted)  
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
Collector-Emitter Breakdown Voltage  
(IC=1.0mA)  
V(BR)CEO  
V(BR)EBO  
V(BR)CBO  
20  
-
-
-
-
V
V
V
Emitter-Base Breakdown Voltage  
(IE=100mA)  
5
-
Collector-Base Breakdown Voltage  
(IC=100mA)  
40  
-
Collector Cutoff Current (VCB=35V)  
ICBO  
IEBO  
-
-
150  
150  
nA  
nA  
Emitter Cutoff Current (VEB=4V)  
2012-11  
WILLAS ELECTRONIC CORP.  

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