WILLAS
9013xLT1
General Purpose Transistors
NPN Silicon
FEATURE
We declare that the material of product compliance with RoHS requirements.
Pb-Free package is available
RoHS product for packing code suffix ”G”
Halogen free product for packing code suffix “H”
DEVICE MARKING AND ORDERING INFORMATION
SOT-23
Device
Marking
Shipping
9013PLT1
9013Q LT1
13P
3000/Tape&Reel
3000/Tape&Reel
13Q
9013RLT1
9013SLT1
13R
13S
3000/Tape&Reel
3000/Tape&Reel
3
MAXIMUM RATINGS
Rating
COLLECTOR
Symbol
Value
Unit
1
Collector-Emitter Voltage
VCEO
VCBO
VEBO
IC
20
V
BASE
Collector-Base Voltage
Emitter-Base Voltage
40
5
V
V
2
EMITTER
Collector current-continuoun
500
mAdc
THERMAL CHARATEERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR-5 Board, (1)
PD
TA=25oC
225
mW
Derate above 25oC
1.8
mW/oC
oC/W
Thermal Resistance, Junction to Ambient
R
556
q JA
Total Device Dissipation
PD
Alumina Substrate, (2) TA=25 oC
Derate above 25oC
300
2.4
mW
mW/oC
oC/W
oC
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
R
417
qJA
Tj ,Tstg
-55 to +150
9013QLT1=13Q
9013RLT1=13R
9013SLT1=13S
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(IC=1.0mA)
V(BR)CEO
V(BR)EBO
V(BR)CBO
20
-
-
-
-
V
V
V
Emitter-Base Breakdown Voltage
(IE=100mA)
5
-
Collector-Base Breakdown Voltage
(IC=100mA)
40
-
Collector Cutoff Current (VCB=35V)
ICBO
IEBO
-
-
150
150
nA
nA
Emitter Cutoff Current (VEB=4V)
2012-11
WILLAS ELECTRONIC CORP.