Datasheet > 8P004SRA1405I15

8P004SRA1405I15

更新时间： 2023-02-26 15:55:57

品牌	Logo	应用领域
WEDC		静态存储器
页数	文件大小	规格书
10页	111K
描述
SRAM Card, 2MX16, 150ns, CMOS, CARD2-68

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中文翻译

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8P004SRA1405I15 数据手册

PCMCIA SRAM Memory Card

SRA Series

Absolute Maximum Ratings ⁽²⁾

Notes:

(1) During transitions, inputs may undershoot to

-2.0V or overshoot to VCC +2.0V for periods

less than 20ns.

Operating Temperature TA (ambient)

Commercial

0°C to +60 °C

(2) Stress greater than those listed under

“Absolute Maximum ratings” may cause

permanent damage to the device. This is a

stress rating only and functional operation at

these or any other conditions greater than those

indicated in the operational sections of this

specification is not implied. Exposure to

absolute maximum rating conditions for

extended periods may affect reliability.

Industrial

Storage Temperature

Commercial

Industrial

Voltage on any pin relative to VSS

VCC supply Voltage relative to VSS

-40°C to +85 °C

0°C to +60 °C

-40°C to +85 °C

-0.5V to VCC+0.5V (1)

-0.5V to +7.0V

DC Characteristics ⁽¹⁾

CMOS Test Conditions: VIL = VSS ± 0.2V, VIH = VCC ± 0.2V

Sym

Parameter

Density Notes Min

Typ⁽³⁾Max

Units Test Conditions

ICC

VCC Active Current

64KB

128KB

256KB

512KB

1MB

110

180

190

VCC = 5.25V

tcycle = 150ns

8MB

ICCS

ILI

VCC Standby Current

Input Leakage Current

Output Leakage Current

All

2,4

5,6

< 0.1

< 1

VCC = 5.25V

Control Signals = VCC

VCC = VCCMAX

Vin =VCC or VSS

VCC = VCCMAX

Vout =VCC or VSS

All

±20

µA

ILO

±20

0.8

µA

VIL

VIH

Input Low Voltage

Input High Voltage

All

3.85

VCC

+0.5

0.4

VOL

VOH

Output Low Voltage

Output High Voltage

All

IOL = 3.2mA

IOH = -2.0mA

VCC-

0.4

VCC

Notes:

1. All currents are for x16 mode and are RMS values unless otherwise specified.

2. Control Signals: CE₁#, CE₂#, OE#, WE#, REG#.

3. Typical: VCC = 5V, T = +25C.

4. ICCS includes battery recharge current. Value depends on battery discharge level. ICCS min is specified for fully

charged battery. ICCS typical value is specified for battery discharge to 2.7V. ICCS max is specified for a fully

discharged battery (0V). Battery will recharge to 1.5V in 20 sec.

5. Values are the same for byte and word wide modes for all card densities.

6. Exceptions: Leakage currents on CE1#, CE2#, OE#, REG# and WE# will be < 500 µA when VIN = GND due to

internal pull-up resistors.

Battery Characteristics

SRA11-14

Type I

min 10

SRA01-04

Type I Type II

min 10

Parameter

Battery Life

Density

All

Notes

(1)

Units

years

Conditions

Normal operation, T=25C

256KB

512KB, 1MB

2MB

(2)

T=25C

Battery backup time is a

calculated value and is not

Battery

Backup Time

months

4MB

6MB

(typical) guaranteed. This should

not be used to schedule

battery recharging.

8MB

Notes:

1. Battery Life refers to functional lifetime of battery.

2. Battery backup time is density and temperature dependent.

February 2002 Rev. 6

PC Card Products

1 2 3 456 7 8...10

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与8P004SRA1405I15相关器件

型号	品牌	获取价格	描述	数据表
8P004SRV0100C15	ETC	获取价格	EEPROM
8P004SRV0100C25	ETC	获取价格	EEPROM
8P004SRV0100I15	WEDC	获取价格	SRAM Card, 256KX16, 150ns, CMOS, CARD-68
8P004SRV0100I25	WEDC	获取价格	SRAM Card, 256KX16, 250ns, CMOS, CARD-68
8P004SRV0101C15	WEDC	获取价格	SRAM Card, 256KX16, 150ns, CMOS, CARD-68
8P004SRV0101C25	ETC	获取价格	EEPROM
8P004SRV0101I15	WEDC	获取价格	SRAM Card, 256KX16, 150ns, CMOS, CARD-68
8P004SRV0101I25	WEDC	获取价格	SRAM Card, 256KX16, 250ns, CMOS, CARD-68
8P004SRV0102C15	ETC	获取价格	EEPROM
8P004SRV0102C25	ETC	获取价格	EEPROM

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