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853S314AGILFT PDF预览

853S314AGILFT

更新时间: 2024-02-24 10:14:28
品牌 Logo 应用领域
艾迪悌 - IDT 驱动光电二极管逻辑集成电路
页数 文件大小 规格书
16页 177K
描述
Low Skew Clock Driver, 853S Series, 4 True Output(s), 0 Inverted Output(s), PDSO20, 4.40 MM X 6.50 MM, 0.925 MM HEIGHT, ROHS COMPLIANT, MO-153, TSSOP-20

853S314AGILFT 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TSSOP
包装说明:4.40 MM X 6.50 MM, 0.925 MM HEIGHT, ROHS COMPLIANT, MO-153, TSSOP-20针数:20
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:5.84
其他特性:IT ALSO OPERATE ON 3.3V SUPPLY系列:853S
输入调节:DIFFERENTIAL MUXJESD-30 代码:R-PDSO-G20
JESD-609代码:e3长度:6.5 mm
逻辑集成电路类型:LOW SKEW CLOCK DRIVER湿度敏感等级:1
功能数量:1反相输出次数:
端子数量:20实输出次数:4
最高工作温度:85 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装代码:TSSOP
封装等效代码:TSSOP20,.25封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH峰值回流温度(摄氏度):260
电源:2.5/3.3 V传播延迟(tpd):0.65 ns
认证状态:Not QualifiedSame Edge Skew-Max(tskwd):0.05 ns
座面最大高度:1.2 mm子类别:Clock Drivers
最大供电电压 (Vsup):2.625 V最小供电电压 (Vsup):2.375 V
标称供电电压 (Vsup):2.5 V表面贴装:YES
温度等级:INDUSTRIAL端子面层:Matte Tin (Sn) - annealed
端子形式:GULL WING端子节距:0.65 mm
端子位置:DUAL处于峰值回流温度下的最长时间:30
宽度:4.4 mm最小 fmax:2700 MHz
Base Number Matches:1

853S314AGILFT 数据手册

 浏览型号853S314AGILFT的Datasheet PDF文件第3页浏览型号853S314AGILFT的Datasheet PDF文件第4页浏览型号853S314AGILFT的Datasheet PDF文件第5页浏览型号853S314AGILFT的Datasheet PDF文件第7页浏览型号853S314AGILFT的Datasheet PDF文件第8页浏览型号853S314AGILFT的Datasheet PDF文件第9页 
ICS853S314I Data Sheet  
LOW SKEW, 1-TO4 DIFFERENTIAL-TO2.5V, 3.3V LVPECL/ECL FANOUT BUFFER  
ADDITIVE PHASE JITTER  
band to the power in the fundamental. When the required offset  
is specified, the phase noise is called a dBc value, which simply  
means dBm at a specified offset from the fundamental. By  
investigating jitter in the frequency domain, we get a better  
understanding of its effects on the desired application over the  
entire time record of the signal. It is mathematically possible to  
calculate an expected bit error rate given a phase noise plot.  
The spectral purity in a band at a specific offset from the  
fundamental compared to the power of the fundamental is called  
the dBc Phase Noise. This value is normally expressed using a  
Phase noise plot and is most often the specified plot in many  
applications.Phase noise is defined as the ratio of the noise power  
present in a 1Hz band at a specified offset from the fundamental  
frequency to the power value of the fundamental. This ratio is  
expressed in decibels (dBm) or a ratio of the power in the 1Hz  
0
-10  
-20  
-30  
Additive Phase Jitter  
3.3V @ 156.25MHz (1.875MHz to 20MHz)  
= 0.138ps (typical)  
-40  
-50  
-60  
-70  
-80  
-90  
-100  
-110  
-120  
-130  
-140  
-150  
-160  
-170  
-180  
-190  
10  
100  
1k  
10k  
100k  
1M  
10M  
41M  
OFFSET FROM CARRIER FREQUENCY (HZ)  
As with most timing specifications, phase noise measurements  
have issues. The primary issue relates to the limitations of the  
equipment. Often the noise floor of the equipment is higher than  
the noise floor of the device. This is illustrated above. The device  
meets the noise floor of what is shown, but can actually be lower.  
The phase noise is dependant on the input source and  
measurement equipment.  
ICS853S314AFI REVISION B OCTOBER 4, 2013  
6
©2013 Integrated Device Technology, Inc.  

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