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841S012BKI PDF预览

841S012BKI

更新时间: 2024-02-12 15:12:23
品牌 Logo 应用领域
艾迪悌 - IDT 时钟外围集成电路晶体
页数 文件大小 规格书
21页 298K
描述
Clock Generator, 250MHz, 8 X 8 MM, 0.925 MM HEIGHT, MO-220, VFQFN-56

841S012BKI 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:QFN
包装说明:VQCCN,针数:56
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:5.52
JESD-30 代码:S-XQCC-N56JESD-609代码:e0
长度:8 mm端子数量:56
最高工作温度:85 °C最低工作温度:-40 °C
最大输出时钟频率:250 MHz封装主体材料:UNSPECIFIED
封装代码:VQCCN封装形状:SQUARE
封装形式:CHIP CARRIER, VERY THIN PROFILE峰值回流温度(摄氏度):225
主时钟/晶体标称频率:25 MHz认证状态:Not Qualified
座面最大高度:1 mm最大供电电压:3.465 V
最小供电电压:3.135 V标称供电电压:3.3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:TIN LEAD
端子形式:NO LEAD端子节距:0.5 mm
端子位置:QUAD处于峰值回流温度下的最长时间:30
宽度:8 mmuPs/uCs/外围集成电路类型:CLOCK GENERATOR, OTHER
Base Number Matches:1

841S012BKI 数据手册

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ICS841S012I  
CRYSTAL-TO-0.7V DIFFERENTIAL HCSL/LVCMOS FREQUENCY SYNTHESIZER  
PRELIMINARY  
TABLE 5. CRYSTAL CHARACTERISTICS  
Parameter  
Test Conditions  
Minimum  
Fundamental  
25  
Typical Maximum Units  
Mode of Oscillation  
Frequency  
MHz  
Ω
Equivalent Series Resistance (ESR)  
Shunt Capacitance  
Drive Level  
50  
7
pF  
100  
µW  
NOTE: Characterized using an 18pF parallel resonant crystal.  
TABLE 6. AC CHARACTERISTICS, VDD = VDDOB = VDDOC = 3.3V 5ꢀ, TA = -40°C TO 85°C  
Symbol Parameter  
Test Conditions  
Minimum Typical Maximum Units  
QB[0:6]  
33.33  
100  
200  
250  
200  
MHz  
MHz  
MHz  
ps  
fOUT  
Output Frequency  
QA[0:1]/nQA[0:1]  
QC  
33.33  
QB[0:6]  
35  
10  
50  
45  
55  
50  
7
Output Skeꢁ;  
NOTE 1, 2  
tsk(o)  
tsk(b)  
QA[0:1]/nQA[0:1]  
ps  
Bank Skeꢁ; NOTE 2, 3  
across Banks B and C  
ps  
QA[0:1]/nQA[0:1]  
ps  
Cycle-to-Cycle  
Jitter; NOTE 2  
tjit(cc)  
QB[0:6]  
ps  
QC  
ps  
QA[0:1]/nQA[0:1]  
QB[0:6], QC  
ps  
tjit(per)  
FM  
RMS Period Jitter  
15  
ps  
SSC Modulation  
Frequency  
Banks A, B, C  
29  
33.33  
850  
kHz  
VHIGH  
VLOW  
Voltage High  
Voltage Loꢁ  
660  
-150  
250  
mV  
mV  
mV  
mV  
VCROSS  
Absolute Crossing Voltage  
550  
140  
ΔVCROSS Total Variation of VCROSS over all edges  
measured betꢁeen  
0.175V to 0.525V  
Bank A  
175  
45  
700  
ps  
Output  
Rise/Fall Time  
tR / tF  
Banks B, C  
Bank A  
20ꢀ - 80ꢀ  
350  
50  
ps  
55  
odc  
Output Duty Cycle  
Banks B, C  
NOTE 1: Defined as skeꢁ betꢁeen outputs at the same supply voltages and ꢁith equal load conditions.  
Measured at VDDOB, C/2.  
NOTE 2: This parameter is defined in accordance ꢁith JEDEC Standard 65.  
NOTE 3: Defined as skeꢁ ꢁithin a bank of outputs at the same supply voltage and ꢁith equal load conditions.  
IDT/ ICS0.7V HCSL/LVCMOS FREQUENCY SYNTHESIZER  
7
ICS841S012BKI REV. A MAY 1, 2008  

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