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841N4830BKILFT PDF预览

841N4830BKILFT

更新时间: 2024-01-21 14:50:16
品牌 Logo 应用领域
艾迪悌 - IDT 时钟外围集成电路晶体
页数 文件大小 规格书
28页 491K
描述
FemtoClock NG Crystal-to-HCSL Frequency Synthesizer

841N4830BKILFT 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:VFQFPN
包装说明:HVQCCN,针数:32
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:5.76
JESD-30 代码:S-XQCC-N32JESD-609代码:e3
长度:5 mm湿度敏感等级:3
端子数量:32最高工作温度:85 °C
最低工作温度:-40 °C最大输出时钟频率:100 MHz
封装主体材料:UNSPECIFIED封装代码:HVQCCN
封装形状:SQUARE封装形式:CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE
峰值回流温度(摄氏度):260主时钟/晶体标称频率:25 MHz
座面最大高度:1 mm最大供电电压:3.6 V
最小供电电压:3 V标称供电电压:3.3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Matte Tin (Sn)
端子形式:NO LEAD端子节距:0.5 mm
端子位置:QUAD处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:5 mmuPs/uCs/外围集成电路类型:CLOCK GENERATOR, OTHER
Base Number Matches:1

841N4830BKILFT 数据手册

 浏览型号841N4830BKILFT的Datasheet PDF文件第4页浏览型号841N4830BKILFT的Datasheet PDF文件第5页浏览型号841N4830BKILFT的Datasheet PDF文件第6页浏览型号841N4830BKILFT的Datasheet PDF文件第8页浏览型号841N4830BKILFT的Datasheet PDF文件第9页浏览型号841N4830BKILFT的Datasheet PDF文件第10页 
841N4830 Datasheet  
Table 6C. HCSL AC Characteristics, V = 3.0V to 3.6V, V  
DD  
= 2.7V to 3.6V, T = -40°C to 85°C  
A
DDO  
Symbol  
Parameter  
Test Conditions  
PLL  
Minimum  
Typical  
Maximum  
Units  
MHz  
MHz  
MHz  
ps  
100  
fOUT  
Output Frequency  
PLL Bypass  
20  
fREF  
Reference Frequency  
25  
tsk(b)  
Bank Skew; NOTE 1, 10  
50  
Phase Jitter, RMS (Random);  
NOTE 11  
100MHz, Integration Range:  
12kHz – 20MHz  
tjit(Ø)  
0.36  
ps  
ps  
ps  
100MHz, 25MHz crystal input  
High Band: 1.5MHz - Nyquist  
(clock frequency/2)  
tREFCLK_HF_RMS Phase Jitter RMS; NOTE 2  
tREFCLK_LF_RMS Phase Jitter RMS; NOTE 2  
0.600  
0.023  
100MHz, 25MHz crystal input  
Low Band: 10kHz - 1.5MHz  
tjit(cc)  
Cycle-to-Cycle Jitter  
PLL Lock Time  
PLL Mode  
30  
10  
ps  
tL  
ms  
Ring-back Voltage Margin;  
NOTE 4, 9  
VRB  
-100  
500  
100  
mV  
ps  
Time before VRB is allowed;  
NOTE 4, 9  
tSTABLE  
VHIGH  
VLOW  
Voltage High  
Voltage Low  
520  
920  
150  
mV  
mV  
-150  
Absolute Crossing Voltage;  
NOTE 3, 6, 7  
VCROSS  
160  
460  
140  
mV  
mV  
Total Variation of VCROSS over  
all edges; NOTE 3, 6, 8  
VCROSS  
Rising Edge Rate; NOTE 4, 5  
Falling Edge Rate; NOTE 4, 5  
0.6  
0.6  
4.0  
4.0  
V/ns  
V/ns  
Power Supply Noise  
Reduction  
PSNR  
odc  
-45  
dB  
%
Output Duty Cycle; NOTE 4  
49  
51  
NOTE: Electrical parameters are guaranteed over the specified ambient operating temperature range, which is established when the device is  
mounted in a test socket with maintained transverse airflow greater than 500 lfpm. The device will meet specifications after thermal equilibrium  
has been reached under these conditions.  
NOTE 1: Defined as skew within a bank of outputs at the same voltage and with equal load conditions.  
NOTE 2: RMS jitter after applying the two evaluation bands to the two transfer functions defined in the Common Clock Architecture and  
reporting the worst case results for each evaluation band. Maximum limit for PCI Express Generation 2 is 3.1ps RMS for tREFCLK_HF_RMS  
(High Band) and 3.0ps RMS for tREFCLK_LF_RMS (Low Band). See IDT Application Note PCI Express Reference Clock Requirements and also  
the PCI Express Application section of this datasheet which show each individual transfer function and the overall composite transfer function.  
NOTE 3: Measurement taken from single ended waveform.  
NOTE 4: Measurement taken from differential waveform.  
NOTE 5: Measured from -150mV to +150mV on the differential waveform (derived from Q minus nQ). The signal must be monotonic through  
the measurement region for rise and fall time. The 300mV measurement window is centered on the differential zero crossing.  
NOTE 6: Measured at the crosspoint where the instantaneous voltage value of the rising edge of Q equals the falling edge of nQ.  
NOTE 7: Refers to the total variation from the lowest crosspoint to the highest, regardless of which edge is crossing. Refers to all crosspoints  
for this measurement.  
NOTE 8: Defined as the total variation of all crossing voltages of rising Q and falling nQ, This is the maximum allowed variance in VCROSS for  
any particular system.  
NOTE 9: TSTABLE is the time the differential clock must maintain a minimum 150mV differential voltage after rising/falling edges before it is  
allowed to drop back into the VRB 100mV differential range.  
NOTE 10: This parameter is defined in accordance with JEDEC Standard 65.  
NOTE 11: See Phase Noise Plot.  
©2016 Integrated Device Technology, Inc.  
7
Revision F, May 23, 2016  

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