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841N254BKILFT PDF预览

841N254BKILFT

更新时间: 2024-01-02 05:40:43
品牌 Logo 应用领域
艾迪悌 - IDT 时钟
页数 文件大小 规格书
23页 480K
描述
VFQFPN-32, Reel

841N254BKILFT 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:VFQFPN
包装说明:HVQCCN,针数:32
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:5.33
Samacsys Confidence:3Samacsys Status:Released
2D Presentation:https://componentsearchengine.com/2D/0T/1912205.2.1.pngSchematic Symbol:https://componentsearchengine.com/symbol.php?partID=1912205
PCB Footprint:https://componentsearchengine.com/footprint.php?partID=19122053D View:https://componentsearchengine.com/viewer/3D.php?partID=1912205
Samacsys PartID:1912205Samacsys Image:https://componentsearchengine.com/Images/9/841N254BKILFT.jpg
Samacsys Thumbnail Image:https://componentsearchengine.com/Thumbnails/2/841N254BKILFT.jpgSamacsys Pin Count:33
Samacsys Part Category:Integrated CircuitSamacsys Package Category:Quad Flat No-Lead
Samacsys Footprint Name:NLG32P1Samacsys Released Date:2020-01-19 15:35:53
Is Samacsys:N其他特性:ALSO OPERATES AT 3.3 V SUPPLY
JESD-30 代码:S-XQCC-N32JESD-609代码:e3
长度:5 mm湿度敏感等级:3
端子数量:32最高工作温度:85 °C
最低工作温度:-40 °C最大输出时钟频率:250 MHz
封装主体材料:UNSPECIFIED封装代码:HVQCCN
封装形状:SQUARE封装形式:CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE
峰值回流温度(摄氏度):260主时钟/晶体标称频率:25 MHz
座面最大高度:1 mm最大供电电压:2.625 V
最小供电电压:2.375 V标称供电电压:2.5 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Matte Tin (Sn)
端子形式:NO LEAD端子节距:0.5 mm
端子位置:QUAD处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:5 mmuPs/uCs/外围集成电路类型:CLOCK GENERATOR, OTHER
Base Number Matches:1

841N254BKILFT 数据手册

 浏览型号841N254BKILFT的Datasheet PDF文件第2页浏览型号841N254BKILFT的Datasheet PDF文件第3页浏览型号841N254BKILFT的Datasheet PDF文件第4页浏览型号841N254BKILFT的Datasheet PDF文件第6页浏览型号841N254BKILFT的Datasheet PDF文件第7页浏览型号841N254BKILFT的Datasheet PDF文件第8页 
ICS841N254I Data Sheet  
FEMTOCLOCK® NG CRYSTAL-TO-LVDS/HCSL CLOCK SYNTHESIZER  
Table 4C. LVDS 3.3V DC Characteristics, VDD = VDDOA = 3.3V 5% or 2.5V 5%, TA = -40°C to 85°C  
Symbol  
VOD  
Parameter  
Test Conditions  
Minimum  
Typical  
Maximum  
Units  
mV  
mV  
V
Differential Output Voltage  
VOD Magnitude Change  
Offset Voltage  
200  
550  
50  
VOD  
VOS  
1.1  
1.3  
50  
VOS  
VOS Magnitude Change  
mV  
Table 5. Crystal Characteristics  
Parameter  
Test Conditions  
Minimum  
Typical  
Fundamental  
25  
Maximum  
Units  
Mode of Oscillation  
Frequency  
MHz  
Equivalent Series Resistance (ESR)  
Shunt Capacitance  
80  
7
pF  
ICS841N254AKI REVISION A APRIL 18, 2011  
5
©2011 Integrated Device Technology, Inc.  

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