Datasheet > 80-M3126TA150M7-K829F71

80-M3126TA150M7-K829F71

更新时间： 2023-09-03 20:39:56

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
18页	7216K
描述
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC

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80-M3126TA150M7-K829F71

datasheet

Characteristic Values

Symbol

Parameter

Conditions

Values

Typ

Unit

V_CE[V] I_C[A]

V_DS[V] I_D[A] T_j[°C]

V_GE[V]

V_GS[V]

Min

Max

V_F[V]

I_F[A]

Inverter Switch

Static

V_GE(th)

Gate-emitter threshold voltage

0,015

150

5,4

6,6

1,63

1,81

1,86

1,9⁽¹⁾

V_CEsat

Collector-emitter saturation voltage

125

150

I_CES

I_GES

r_g

Collector-emitter cut-off current

Gate-emitter leakage current

Internal gate resistance

Input capacitance

1200

200

µA

1000

C_ies

C_oes

C_res

Q_g

32000

960

Output capacitance

Reverse transfer capacitance

Gate charge

380

V_CC= 600 V

150

1140

Thermal

λ_paste= 2,5 W/mK

(HPTP)

(2)

R_th(j-s)

Thermal resistance junction to sink

Dynamic

0,25

K/W

362,88

367,36

367,68

86,72

96,96

100,48

275,52

309,44

318,08

67,91

92,9

t_d(on)

Turn-on delay time

Rise time

125

150

t_r

125

150

R_gon= 4 Ω

R_goff= 4 Ω

t_d(off)

Turn-off delay time

Fall time

125

150

±15

600

150

t_f

125

150

99,19

12,32

16,43

17,46

11,25

15,38

16,75

Q_rFWD=2,1 µC

Q_rFWD=5,43 µC

Q_rFWD=6,47 µC

E_on

Turn-on energy (per pulse)

Turn-off energy (per pulse)

125

150

mWs

E_off

125

150

19 Mar. 2021 / Revision 1

1 234 5 6 7...18

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