Datasheet > 80-M3126PA100M7-K828F7

80-M3126PA100M7-K828F7

更新时间： 2023-09-03 20:33:16

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
18页	7716K
描述
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC

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80-M3126PA100M7-K828F70

datasheet

Characteristic Values

Symbol

Parameter

Conditions

Values

Typ

Unit

V_CE[V] I_C[A]

V_DS[V] I_D[A] T_j[°C]

V_GE[V]

V_GS[V]

Min

Max

V_F[V]

I_F[A]

Inverter Switch

Static

V_GE(th)

Gate-emitter threshold voltage

0,01

100

5,4

6,6

1,53

1,71

1,75

1,85⁽¹⁾

V_CEsat

Collector-emitter saturation voltage

125

150

I_CES

I_GES

r_g

Collector-emitter cut-off current

Gate-emitter leakage current

Internal gate resistance

Input capacitance

1200

100

0,5

µA

None

21000

700

C_ies

C_oes

C_res

Q_g

Output capacitance

Reverse transfer capacitance

Gate charge

280

V_CC= 600 V

100

700

Thermal

λ_paste= 2,5 W/mK

(HPTP)

(2)

R_th(j-s)

Thermal resistance junction to sink

Dynamic

0,4

K/W

118,2

117,6

10,2

t_d(on)

Turn-on delay time

Rise time

125

150

t_r

125

150

12,4

13,4

R_gon= 2 Ω

R_goff= 2 Ω

173,6

200,4

205,6

82,85

96,38

106,77

3,26

t_d(off)

Turn-off delay time

Fall time

125

150

±15

600

100

t_f

125

150

Q_rFWD=11,6 µC

Q_rFWD=17,27 µC

Q_rFWD=19,18 µC

E_on

Turn-on energy (per pulse)

Turn-off energy (per pulse)

125

150

4,87

mWs

5,37

6,6

E_off

125

150

8,77

9,49

08 Mar. 2021 / Revision 5

1 234 5 6 7...18

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