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80-M212WPA015M7-K757F7 PDF预览

80-M212WPA015M7-K757F7

更新时间: 2023-09-03 20:25:16
品牌 Logo 应用领域
VINCOTECH /
页数 文件大小 规格书
27页 8987K
描述
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC

80-M212WPA015M7-K757F7 数据手册

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80-M212WPA015M7-K757F70  
datasheet  
Maximum Ratings  
Tj = 25 °C, unless otherwise specified  
Parameter  
Symbol  
Conditions  
Value  
Unit  
Inverter Switch 2  
VCES  
Collector-emitter voltage  
1200  
21  
V
A
IC  
Collector current  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
Tj = 150 °C  
ICRM  
Repetitive peak collector current  
Total power dissipation  
Gate-emitter voltage  
tp limited by Tjmax  
Tj = Tjmax  
30  
A
Ptot  
79  
W
V
VGES  
±20  
9,5  
175  
tSC  
Short circuit ratings  
VGE = 0 V, VCC = 800 V  
µs  
°C  
Tjmax  
Maximum junction temperature  
Inverter Diode 2  
VRRM  
Peak repetitive reverse voltage  
1200  
21  
V
A
IF  
Continuous (direct) forward current  
Surge (non-repetitive) forward current  
Surge current capability  
Tj = Tjmax  
Ts = 80 °C  
Tj = 25 °C  
Ts = 80 °C  
IFSM  
I2t  
65  
A
Single Half Sine Wave,  
tp = 10 ms  
21  
A2s  
W
°C  
Ptot  
Total power dissipation  
Tj = Tjmax  
66  
Tjmax  
Maximum junction temperature  
175  
Inverter Switch  
VCES  
Collector-emitter voltage  
1200  
14  
V
A
IC  
Collector current  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
Tj = 150 °C  
ICRM  
Repetitive peak collector current  
Total power dissipation  
Gate-emitter voltage  
tp limited by Tjmax  
Tj = Tjmax  
20  
A
Ptot  
67  
W
V
VGES  
±20  
9,5  
175  
tSC  
Short circuit ratings  
VGE = 0 V, VCC = 800 V  
µs  
°C  
Tjmax  
Maximum junction temperature  
Copyright Vincotech  
2
23 Apr. 2020 / Revision 1  

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