Datasheet > 80-M212PMB050M7-K740A71

80-M212PMB050M7-K740A71

更新时间： 2023-09-03 20:25:11

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
29页	8692K
描述
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC

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80-M212PMB050M7-K740A71

datasheet

Characteristic Values

Symbol

Parameter

Conditions

Values

Typ

Unit

V_CE[V] I_C[A]

V_DS[V] I_D[A] T_j[°C]

V_GE[V]

V_GS[V]

Min

Max

V_F[V]

I_F[A]

Brake Switch

Static

V_GE(th)

Gate-emitter threshold voltage

0,005

5,4

6,6

1,55

1,77

1,83

1,9⁽¹⁾

V_CEsat

Collector-emitter saturation voltage

125

150

I_CES

I_GES

r_g

Collector-emitter cut-off current

Gate-emitter leakage current

Internal gate resistance

Input capacitance

1200

0,09

0,5

µA

None

10000

350

C_ies

C_oes

C_res

Q_g

Output capacitance

Reverse transfer capacitance

Gate charge

130

V_CC= 600 V

0/15

380

Thermal

λ_paste= 2,5 W/mK

(HPTP)

(2)

R_th(j-s)

Thermal resistance junction to sink

Dynamic

0,63

K/W

165

157

t_d(on)

Turn-on delay time

Rise time

125

150

166

t_r

125

150

102

R_gon= 16 Ω

R_goff= 16 Ω

522

t_d(off)

Turn-off delay time

Fall time

125

150

536

547

0/15

600

75,85

119,19

108,77

6,66

8,28

8,62

3,5

t_f

125

150

Q_rFWD=4,21 µC

Q_rFWD=6,52 µC

Q_rFWD=6,96 µC

E_on

Turn-on energy (per pulse)

Turn-off energy (per pulse)

125

150

mWs

E_off

125

150

4,66

4,86

01 May. 2022 / Revision 3

1...3 4 567 8 9...29

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