Datasheet > 7MBR50XMA120-50

7MBR50XMA120-50

更新时间： 2024-03-03 10:09:41

品牌	Logo	应用领域
富士电机 - FUJI		/
页数	文件大小	规格书
12页	2317K
描述
PIM(conv.+Brake+inv.) M719

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7MBR50XMA120-50 数据手册

7MBR50XMA120-50

IGBT Modules

Units

◼ Electrical characteristics ( at T _vj= 25°C unless otherwise specified)

Characteristics

Items

Symbols

Conditions

min.

typ.

max.

V _GE

Zero gate voltage

collector current

I _CES

I _GES

100

7.0

μA

_CE= 1200V

Gate-Emitter leakage current

V _CE

V _GE= +20/-20V

20V

50mA

50A

Gate-Emitter

V _GE(th)

6.0

6.5

threshold voltage

I _C

V _CE(sat)

T _vj=25°C

1.70

2.15

(terminal)

T _vj=25°C

1.50

1.85

1.95

2.00

1.95

Collector-Emitter

saturation voltage

T _vj=125°C

T _vj=150°C

T _vj=175°C

V _CE(sat)

(chip)

r _g

Internal gate resistance

Capacitance

C _ies

C _oes

C _res

5.3

_CE= 10V, V _GE=0V, f = 1MHz

0.18

0.05

V _CC= 600V V _GE=-15 → +15V

Q _G

Gate charge

340

I _C

I _F

50A

V _F(terminal)

T _vj=25°C

2.00

1.80

1.85

1.80

1.75

0.09

0.10

0.04

0.24

0.27

0.28

0.11

0.17

0.20

0.21

0.08

0.14

0.17

0.19

2.45

T _vj=25°C

2.25

Forward voltage

T _vj=125°C

T _vj=150°C

T _vj=175°C

T _vj=25°C

V _F

(chip)

V _CC= 600V

I _C,I _F= 50A L _s=30nH

T _vj=125°C

T _vj=150°C

T _vj=175°C

T _vj=25°C

t _d(on)

_GE= +15/-15 V

R _G18 Ω

_CC= 600V

I _C,I _F= 50A L _s=30nH

V _GE= +15/-15 V

T _vj=125°C

T _vj=150°C

T _vj=175°C

T _vj=25°C

t _r

R _G

= 18 Ω

Switching time (*1)

V _CC= 600V

I _C,I _F= 50A L _s=30nH

V _GE= +15/-15 V

T _vj=125°C

T _vj=150°C

T _vj=175°C

T _vj=25°C

t _d(off)

μs

R _G

_CC= 600V

I _C,I _F= 50A L _s=30nH

_GE= +15/-15 V

R _G18 Ω

= 18 Ω

T _vj=125°C

T _vj=150°C

T _vj=175°C

T _vj=25°C

t _f

V _CC= 600V

I _C,I _F= 50A L _s=30nH

V _GE= +15/-15 V

T _vj=125°C

T _vj=150°C

T _vj=175°C

t _rr

Reverse recovery time

R _G

= 18 Ω

Turn on time (t _on) = t _d(on)+ t _r, Turn off time (t _off) = t _d(off)+ t _f

(*1)

FM6M01711b

2023/3

1 234 5 6 7...12

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