Datasheet > 7MBP200VEA060-50

7MBP200VEA060-50

更新时间： 2022-05-14 14:56:17

品牌	Logo	应用领域
富士电机 - FUJI		双极性晶体管
页数	文件大小	规格书
11页	804K
描述
IGBT MODULE (V series) 600V / 200A / IPM

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7MBP200VEA060-50 数据手册

7MBP200VEA060-50

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

Characteristics (Representative)

Power supply current vs. Switching frequency

T_j= 25 (typ.)

Input signal threshold voltage

vs. Power supply voltage (typ.)

℃

200

150

100

3.0

2.5

2.0

1.5

1.0

0.5

0.0

Low-side

High-side

T_C=25~125

℃

inth(off)

inth(on)

V_CC=17V

_CC=15V

_CC=13V

V_CC=17V

_CC=15V

_CC=13V

Switchig frequency : fsw [ kHz ]

Power supply voltage : V^CC[ V ]

Under voltage hysterisis

Under voltage vs. Junction temperature (typ.)

vs. Junction temperature (typ.)

0.8

0.6

0.4

0.2

100

120

140

100

120

140

Junction temperature : T

[

]

℃

Junction temperature : T

[

]

℃

Alarm hold time vs. Power supply voltage (typ.)

Over heating characteristics

^jOH, T^jHvs. V^CC(typ.)

200

150

100

jOH

ALM(TjOH)

ALM(OC)

Power supply voltage : V^CC[ V ]

Power supply voltage : VCC [ V ]

1 2 345 6 7...11

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