7MBP150RA120

更新时间： 2024-02-16 20:39:54

品牌	Logo	应用领域
富士电机 - FUJI		双极性晶体管
页数	文件大小	规格书
8页	373K
描述
IGBT-IPM(1200V/150A)

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数据手册

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7MBP150RA120 数据手册

7MBP150RA120

IGBT-IPM

Electrical characteristics of control circuit(at Tc=Tj=25°C, Vcc=15V)

Item

Symbol Condition

Min.

Typ.

Max.

Unit

fsw=0 to 15kHz Tc=-20 to 100°C *7

Iccp

Power supply current of P-line side Pre-driver(one unit)

Power supply current of N-line side three Pre-driver

Input signal threshold voltage (on/off)

fsw=0 to 15kHz Tc=-20 to 100°C *7

ICCN

Vin(th)

1.00

1.70

1.35

1.70

OFF

2.05

8.0

2.40

Rin=20k ohm

Input zener voltage

VDC=0V, Ic=0A, Case temperature, Fig.1

°C

TCOH

TCH

TjOH

TjH

Over heating protection temperature level

Hysteresis

110

125

surface of IGBT chips

IGBT chips over heating protection temperature level

Hysteresis

150

Tj=125°C

IOC

Collector current protection level

INV

225

Tj=125°C

IOC

Tj=25°C Fig.2

µs

tDOC

VUV

Over current protection delay time (Fig.2)

Under voltage protection level

Hysteresis

11.0

12.5

0.2

1.5

µs

ohm

tALM

tSC

Alarm signal hold time

Tj=25°C Fig.3

SC protection delay time

Limiting resistor for alarm

*7 Switching frequency of IPM

RALM

1425

1500

1575

Dynamic characteristics(at Tc=Tj=125°C, Vcc=15V)

Item

Symbol Condition

Min.

Typ.

Max.

Unit

µs

Switching time (IGBT)

Switching time (FWD)

ton

toff

trr

IC=150A, VDC=600V

0.3

3.6

µs

IF=150A, VDC=600V

0.4

µs

Thermal characteristics(Tc=25°C)

Item

Symbol

Rth(j-c)

Rth(c-f)

Typ.

Max.

0.12

Unit

Junction to Case thermal resistance

INV

IGBT

FWD

IGBT

°C/W

0.29

0.31

Case to fin thermal resistance with compound

0.05

Recommendable value

Item

Symbol

Min.

200

13.5

Typ.

Max.

800

16.5

Unit

DC bus voltage

VDC

VCC

fSW

Operating power supply voltage range of Pre-driver

Switching frequency of IPM

kHz

N·m

Screw torque

Mounting (M5)

Terminal (M5)

2.5

3.0

123 4 5 6 7 8

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