NXP Semiconductors
74HC1G04-Q100; 74HCT1G04-Q100
Inverter
Table 7.
Static characteristics …continued
Voltages are referenced to GND (ground = 0 V). All typical values are measured at Tamb = 25 C.
Symbol
Parameter
Conditions
40 C to +85 C
40 C to +125 C Unit
Min
Typ
Max
Min
Max
ICC
ICC
CI
supply current
VI = VCC or GND; IO = 0 A;
VCC = 5.5 V
-
-
-
-
10
500
-
-
20
A
A
pF
additional supply
current
per input; VCC = 4.5 V to 5.5 V;
VI = VCC 2.1 V; IO = 0 A
-
-
-
850
-
input capacitance
1.5
11. Dynamic characteristics
Table 8.
Dynamic characteristics
GND = 0 V; tr = tf 6.0 ns; All typical values are measured at Tamb = 25 C. For test circuit see Figure 6
Symbol Parameter
Conditions
40 C to +85 C
40 C to +125 C Unit
Min
Typ
Max
Min
Max
For type 74HC1G04-Q100
[1]
tpd
propagation delay
A to Y; see Figure 5
VCC = 2.0 V; CL = 50 pF
VCC = 4.5 V; CL = 50 pF
VCC = 5.0 V; CL = 15 pF
VCC = 6.0 V; CL = 50 pF
VI = GND to VCC
-
-
-
-
-
25
9
105
21
-
-
-
-
-
-
135
27
-
ns
ns
ns
ns
pF
7
8
18
-
23
-
[2]
[1]
CPD
power dissipation
capacitance
16
For type 74HCT1G04-Q100
tpd
propagation delay A to Y; see Figure 5
VCC = 4.5 V; CL = 50 pF
-
-
-
10
8
24
-
-
-
-
27
-
ns
ns
pF
VCC = 5.0 V; CL = 15 pF
[2]
CPD
power dissipation
capacitance
VI = GND to VCC 1.5 V
18
-
-
[1] tpd is the same as tPLH and tPHL
.
[2] CPD is used to determine the dynamic power dissipation PD (W).
PD = CPD VCC2 fi + (CL VCC2 fo) where:
fi = input frequency in MHz
fo = output frequency in MHz
CL = output load capacitance in pF
VCC = supply voltage in Volts
(CL VCC2 fo) = sum of outputs
74HC_HCT1G04_Q100
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© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 1 — 25 September 2013
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