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74HC32DTR2G PDF预览

74HC32DTR2G

更新时间: 2024-02-16 13:22:09
品牌 Logo 应用领域
安森美 - ONSEMI
页数 文件大小 规格书
8页 122K
描述
Quad 2−Input OR Gate High−Performance Silicon−Gate CMOS

74HC32DTR2G 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TSSOP
包装说明:TSSOP,针数:14
Reach Compliance Code:unknown风险等级:5.81
系列:HC/UHJESD-30 代码:R-PDSO-G14
JESD-609代码:e4长度:5 mm
逻辑集成电路类型:OR GATE湿度敏感等级:NOT SPECIFIED
功能数量:4输入次数:2
端子数量:14最高工作温度:125 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装代码:TSSOP封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH峰值回流温度(摄氏度):260
传播延迟(tpd):110 ns认证状态:COMMERCIAL
座面最大高度:1.2 mm最大供电电压 (Vsup):6 V
最小供电电压 (Vsup):2 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:MILITARY端子面层:NICKEL PALLADIUM GOLD
端子形式:GULL WING端子节距:0.65 mm
端子位置:DUAL处于峰值回流温度下的最长时间:40
宽度:4.4 mm

74HC32DTR2G 数据手册

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74HC32DTR2G 替代型号

型号 品牌 替代类型 描述 数据表
SN74HC32PWE4 TI

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