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74ABT823DB,118 PDF预览

74ABT823DB,118

更新时间: 2024-01-05 10:01:50
品牌 Logo 应用领域
恩智浦 - NXP 驱动信息通信管理光电二极管逻辑集成电路触发器
页数 文件大小 规格书
17页 141K
描述
74ABT823 - 9-bit D-type flip-flop with reset and enable; 3-state SSOP2 24-Pin

74ABT823DB,118 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SSOP2包装说明:SSOP, SSOP24,.3
针数:24Reach Compliance Code:unknown
HTS代码:8542.39.00.01风险等级:5.57
其他特性:WITH CLEAR AND CLOCK ENABLE系列:ABT
JESD-30 代码:R-PDSO-G24JESD-609代码:e4
长度:8.2 mm负载电容(CL):50 pF
逻辑集成电路类型:BUS DRIVER最大频率@ Nom-Sup:125000000 Hz
最大I(ol):0.064 A湿度敏感等级:1
位数:9功能数量:1
端口数量:2端子数量:24
最高工作温度:85 °C最低工作温度:-40 °C
输出特性:3-STATE输出极性:TRUE
封装主体材料:PLASTIC/EPOXY封装代码:SSOP
封装等效代码:SSOP24,.3封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, SHRINK PITCH包装方法:TAPE AND REEL
峰值回流温度(摄氏度):260电源:5 V
最大电源电流(ICC):34 mA传播延迟(tpd):6.8 ns
认证状态:Not Qualified座面最大高度:2 mm
子类别:FF/Latches最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:BICMOS
温度等级:INDUSTRIAL端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式:GULL WING端子节距:0.65 mm
端子位置:DUAL处于峰值回流温度下的最长时间:30
触发器类型:POSITIVE EDGE宽度:5.3 mm
Base Number Matches:1

74ABT823DB,118 数据手册

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74ABT823  
NXP Semiconductors  
9-bit D-type flip-flop with reset and enable; 3-state  
6. Functional description  
6.1 Function table  
Table 3.  
Function table[1]  
Input  
Output  
Operating mode  
OE  
L
MR  
L
CE  
X
CP  
X
Dn  
X
h
Qn  
L
clear  
L
H
L
H
load and read data  
L
H
L
l
L
L
H
H
X
NC  
X
X
X
NC  
Z
hold  
H
X
high-impedance  
[1] H = HIGH voltage level;  
L = LOW voltage level;  
h = HIGH voltage level one set-up time prior to the LOW-to-HIGH clock transition;  
I = LOW voltage level one set-up time prior to the LOW-to-HIGH clock transition;  
= LOW-to-HIGH clock transition;  
NC = no change;  
X = don’t care;  
Z = high-impedance OFF-state.  
7. Limiting values  
Table 4.  
Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol  
VCC  
VI  
Parameter  
Conditions  
Min  
0.5  
1.2  
0.5  
18  
50  
-
Max  
+7.0  
+7.0  
+5.5  
-
Unit  
V
supply voltage  
[1]  
[1]  
input voltage  
V
VO  
output voltage  
output in OFF-state or HIGH-state  
VI < 0 V  
V
IIK  
input clamping current  
output clamping current  
output current  
mA  
mA  
mA  
C  
C  
IOK  
IO  
VO < 0 V  
-
output in LOW-state  
128  
150  
+150  
[2]  
Tj  
junction temperature  
storage temperature  
-
Tstg  
65  
[1] The input and output voltage ratings may be exceeded if the input and output current ratings are observed.  
[2] The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction  
temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150 C.  
74ABT823  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2011. All rights reserved.  
Product data sheet  
Rev. 4 — 7 November 2011  
5 of 17  
 
 
 
 
 
 

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