5秒后页面跳转
72SD3232RPFK PDF预览

72SD3232RPFK

更新时间: 2024-02-06 03:07:51
品牌 Logo 应用领域
麦斯威 - MAXWELL 内存集成电路动态存储器
页数 文件大小 规格书
41页 595K
描述
1 Gbit SDRAM 32-Meg X 32-Bit X 4-Banks

72SD3232RPFK 技术参数

生命周期:Obsolete包装说明:DFP,
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.32风险等级:5.73
访问模式:FOUR BANK PAGE BURST最长访问时间:6 ns
其他特性:AUTO/SELF REFRESHJESD-30 代码:R-XDFP-F72
长度:26.67 mm内存密度:1073741824 bit
内存集成电路类型:SYNCHRONOUS DRAM内存宽度:32
功能数量:1端口数量:1
端子数量:72字数:33554432 words
字数代码:32000000工作模式:SYNCHRONOUS
最高工作温度:125 °C最低工作温度:-55 °C
组织:32MX32封装主体材料:UNSPECIFIED
封装代码:DFP封装形状:RECTANGULAR
封装形式:FLATPACK认证状态:Not Qualified
自我刷新:YES最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):3 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:MILITARY端子形式:FLAT
端子节距:0.635 mm端子位置:DUAL
宽度:19 mmBase Number Matches:1

72SD3232RPFK 数据手册

 浏览型号72SD3232RPFK的Datasheet PDF文件第1页浏览型号72SD3232RPFK的Datasheet PDF文件第2页浏览型号72SD3232RPFK的Datasheet PDF文件第4页浏览型号72SD3232RPFK的Datasheet PDF文件第5页浏览型号72SD3232RPFK的Datasheet PDF文件第6页浏览型号72SD3232RPFK的Datasheet PDF文件第7页 
1 Gbit(32-Meg X 32-Bit X 4-Banks) SDRAM  
72SD3232  
TABLE 1. ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
MAX  
UNIT  
Voltage on any pin relative to V  
V
-0.5 to VCC + 0.5  
(< 4.6(max))  
V
SS  
IN  
V
OUT  
Supply voltage relative to V  
V
-0.5 to +4.6  
50  
V
mA  
W
SS  
CC  
Short circuit output current  
Power Dissipation  
IOUT  
PD  
1.0  
Operating Temperature  
Storage Temperature  
TOPR  
TSTG  
-55 to +125  
-65 to +150  
°C  
°C  
TABLE 2. RECOMMENDED OPERATING CONDITIONS  
(VCC = 3.3V + 0.3V, V Q = 3.3V + 0.3V, T = -55 TO 125°C, UNLESS OTHERWISE SPECIFIED)  
CC  
A
CC  
PARAMETER  
Supply Voltage  
SYMBOL  
MIN  
3.0  
0
2.0  
-0.3  
MAX  
3.6  
0
UNIT  
V
V
V
V
1,2  
V , V  
CC  
CCQ  
3
V , V  
SS  
SSQ  
1,4  
Input High Voltage  
Input Low Voltage  
V
V + 0.3  
IH  
CC  
1,5  
V
IL  
.8  
1. All voltage referred to VSS  
2. The supply voltage with all V and VCCQ pins must be on the same level  
CC  
3. The supply voltage with all VSS and VSSQ pins must be on the same level  
4. V (max) = V +2.0V for pulse width <3ns at V  
IH  
CC  
CC  
5. V (min) = V -2.0V for pulse width <3ns at V  
IL  
SS  
SS  
TABLE 3. DELTA LIMITS  
1
PARAMETER  
DESCRIPTION  
VARIATION  
ICC1  
Operating Current  
Standby Current in Power Down  
Active Standby Current  
+ 10%  
+ 10%  
+ 10%  
I
CC2P ICC2PS CC2N CC2NS  
ICC3P CC3PS CC3N CC3NS  
1. ±10% of value specified in Table 4  
I
I
I
I
I
TABLE 4. DC ELECTRICAL CHARACTERISTICS  
(VCC = 3.3V + 0.3V, V Q = 3.3V + 0.3V, T = -55 TO 125°C, UNLESS OTHERWISE SPECIFIED)  
CC  
A
PARAMETER  
Operating Current1,2,3  
SYMBOL  
TEST CONDITIONS  
SUBGROUPS  
MIN  
MAX  
UNITS  
ICC1 Burst length CAS Latency = 2 1, 2, 3  
460  
460  
mA  
= 1  
t
CAS Latency = 3  
RC = min  
Standby Current in Power Down4  
ICC2P  
CKE = V  
1, 2, 3  
12  
mA  
IL  
tCK = 12 ns  
02.04.05 Rev 3  
All data sheets are subject to change without notice  
3
©2005 Maxwell Technologies  
All rights reserved.  

与72SD3232RPFK相关器件

型号 品牌 描述 获取价格 数据表
72SD3232RPME MAXWELL Synchronous DRAM, 32MX32, 6ns, CMOS

获取价格

72SD3232RPMH MAXWELL Synchronous DRAM, 32MX32, 6ns, CMOS

获取价格

72SK1220AA00J KEMET Film Capacitor, Polypropylene, 1500V, 0.0022uF

获取价格

72SK13302600J KEMET Film Capacitor, Polypropylene, 1500V, 0.0033uF

获取价格

72SK13302600K KEMET Film Capacitor, Polypropylene, 1500V, 0.0033uF

获取价格

72SK13302600M KEMET Film Capacitor, Polypropylene, 1500V, 0.0033uF

获取价格