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71V416YL12YGI PDF预览

71V416YL12YGI

更新时间: 2024-01-04 14:30:53
品牌 Logo 应用领域
艾迪悌 - IDT 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
9页 84K
描述
Standard SRAM, 256KX16, 12ns, CMOS, PDSO44, 0.400 INCH, ROHS COMPLIANT, PLASTIC, SOJ-44

71V416YL12YGI 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Obsolete包装说明:0.400 INCH, ROHS COMPLIANT, PLASTIC, SOJ-44
Reach Compliance Code:compliant风险等级:5.57
Is Samacsys:N最长访问时间:12 ns
I/O 类型:COMMONJESD-30 代码:R-PDSO-J44
JESD-609代码:e3内存密度:4194304 bit
内存集成电路类型:STANDARD SRAM内存宽度:16
湿度敏感等级:3功能数量:1
端子数量:44字数:262144 words
字数代码:256000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:256KX16输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:SOJ
封装等效代码:SOJ44,.44封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:PARALLEL
峰值回流温度(摄氏度):260电源:3.3 V
认证状态:Not Qualified最大待机电流:0.01 A
最小待机电流:3 V子类别:SRAMs
最大压摆率:0.18 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):3 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Matte Tin (Sn) - annealed
端子形式:J BEND端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:30
Base Number Matches:1

71V416YL12YGI 数据手册

 浏览型号71V416YL12YGI的Datasheet PDF文件第3页浏览型号71V416YL12YGI的Datasheet PDF文件第4页浏览型号71V416YL12YGI的Datasheet PDF文件第5页浏览型号71V416YL12YGI的Datasheet PDF文件第6页浏览型号71V416YL12YGI的Datasheet PDF文件第8页浏览型号71V416YL12YGI的Datasheet PDF文件第9页 
IDT71V416YS, IDT71V416YL 3.3V CMOS Static RAM  
4 Meg (256K x 16-Bit)  
Commercial and Industrial Temperature Ranges  
Timing Waveform of Write Cycle No. 2 (CS Controlled Timing)(1,3)  
tWC  
ADDRESS  
CS  
tAW  
(2)  
tAS  
tCW  
tBW  
BHE, BLE  
WE  
tWP  
tWR  
DATAOUT  
DATAIN  
tDH  
t
DW  
DATAIN VALID  
6442 drw 0  
Timing Waveform of Write Cycle No. 3  
(BHE, BLE Controlled Timing)(1,3)  
tWC  
ADDRESS  
CS  
tAW  
(2)  
tCW  
tAS  
tBW  
BHE, BLE  
tWP  
tWR  
WE  
DATAOUT  
tDH  
tDW  
DATAIN  
DATAIN VALID  
6442 drw 1  
NOTES:  
1. A write occurs during the overlap of a LOW CS, LOW BHE or BLE, and a LOW WE.  
2. During this period, I/O pins are in the output state, and input signals must not be applied.  
3. If the CS LOW or BHE and BLE LOW transition occurs simultaneously with or after the WE LOW transition, the outputs remain in a high-impedance state.  
6.42  
7

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