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71V416YL12YG2 PDF预览

71V416YL12YG2

更新时间: 2024-02-23 00:28:26
品牌 Logo 应用领域
艾迪悌 - IDT 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
9页 137K
描述
Standard SRAM, 256KX16, 12ns, CMOS, PDSO44

71V416YL12YG2 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:SOJ, SOJ44,.44
Reach Compliance Code:compliant风险等级:5.57
Base Number Matches:1

71V416YL12YG2 数据手册

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IDT71V416YS, IDT71V416YL 3.3V CMOS Static RAM  
for Automotive Applications 4 Meg (256K x 16-Bit)  
Automotive Temperature Ranges  
DC Electrical Characteristics  
(VDD = Min. to Max., Automotive Temperature Ranges)  
Automotive  
Temperature  
Grade  
IDT71V416  
Symbol  
Parameter  
Input Leakage Current  
Test Conditions  
Min.  
Max.  
Unit  
___  
___  
___  
___  
___  
1 and 2  
3 and 4  
1 and 2  
3 and 4  
5
1
5
1
|ILI|  
VDD = Max., VIN = VSS to VDD  
µA  
|ILO|  
Output Leakage Current  
VDD = Max., CS = VIH, VOUT = VSS to VDD  
µA  
V
VOL  
VOH  
Output Low Voltage  
Output High Voltage  
IOL = 8mA, VDD = Min.  
IOH = -4mA, VDD = Min.  
0.4  
___  
2.4  
V
6817 tbl 07  
DC Electrical Characteristics(1, 2, 3)  
(VDD = Min. to Max., VLC = 0.2V, VHC = VDD – 0.2V, Automotive Temperature Ranges)  
71V416S/L12  
71V416S/L15  
Automotive Grade  
71V416S/L20  
Automotive Grade  
Symbol  
Parameter  
Automotive Grade  
Unit  
1
2
3 and 4  
1
2
3 and 4  
1
2
3 and 4  
S
L
Max.  
Max.  
130  
120  
120  
110  
110  
100  
125  
115  
115  
105  
105  
95  
120  
110  
110  
100  
100  
90  
Dynamic Operating Current  
CS < VLC, Outputs Open, VDD = Max., f = fMAX  
CC  
I
mA  
mA  
(3)  
Ty p . (4)  
85  
85  
85  
80  
80  
80  
80  
80  
80  
S
L
S
L
Max.  
Max.  
Max.  
65  
50  
20  
10  
65  
50  
20  
10  
65  
45  
20  
10  
55  
45  
20  
10  
55  
45  
20  
10  
50  
40  
20  
10  
50  
40  
20  
10  
50  
40  
20  
10  
50  
40  
20  
10  
Dynamic Standby Power Supply Current  
CS > VHC, Outputs Open, VDD = Max., f = fMAX  
SB  
I
(3)  
Full Standby Power Supply Current (static)  
CS > VHC, Outputs Open, VDD = Max., f = 0  
SB1  
I
mA  
(3)  
IDT71V416S/71MVax4. 16L  
6817 tbl 8  
NOTES:  
1. All values are maximum guaranteed values.  
2. All inputs switch between 0.2V (Low) and VDD -0.2V (High).  
3. fMAX = 1/tRC (all address inputs are cycling at fMAX); f = 0 means no address input lines are changing.  
4. Typical values are measured at 3.3V, 25oC and with equal read and write cycles. This parameter is guaranteed by device characterization but is not production tested.  
3.3V  
AC Test Loads  
+1.5V  
320  
50  
OUT  
DATA  
I/O  
Z = 50  
0
5pF*  
350  
30pF  
6817 drw 03  
6817 drw 04  
Figure 1. AC Test Load  
*Including jig and scope capacitance.  
Figure 2. AC Test Load  
(for tCLZ, tOLZ, tCHZ, tOHZ, tOW, and tWHZ)  
7
6
5
4
3
tAA, tACS  
(Typical, ns)  
AC Test Conditions  
Input Pulse Levels  
GND to 3.0V  
1.5ns  
2
1
Input Rise/Fall Times  
Input Timing Reference Levels  
Output Reference Levels  
AC Test Load  
1.5V  
1.5V  
180  
8 20 40 60 80 100 120 140 160  
CAPACITANCE (pF)  
200  
6817 drw 05  
Figures 1,2 and 3  
Figure 3. Output Capacitive Derating  
6817 tbl 09  
6.442  

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