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71T75602100BG8 PDF预览

71T75602100BG8

更新时间: 2022-12-29 19:15:19
品牌 Logo 应用领域
艾迪悌 - IDT 静态存储器
页数 文件大小 规格书
23页 1292K
描述
Synchronous ZBT SRAMs

71T75602100BG8 数据手册

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512K x 36, 1M x 18  
IDT71T75602  
IDT71T75802  
2.5V Synchronous ZBT™ SRAMs  
2.5V I/O, Burst Counter  
Pipelined Outputs  
Description  
Features  
The IDT71T75602/802 are 2.5V high-speed 18,874,368-bit  
(18 Megabit)synchronousSRAMs.Theyaredesignedtoeliminatedead  
bus cycles when turning the bus around between reads and writes, or  
writesandreads. Thus, theyhavebeengiventhenameZBTTM, orZero  
Bus Turnaround.  
512K x 36, 1M x 18 memory configurations  
Supports high performance system speed - 200 MHz  
(3.2 ns Clock-to-Data Access)  
ZBTTM Feature - No dead cycles between write and read  
cycles  
Address and control signals are applied to the SRAM during one  
clockcycle, andtwocycleslatertheassociateddatacycleoccurs, beit  
read or write.  
Internally synchronized output buffer enable eliminates the  
need to control OE  
Single R/W (READ/WRITE) control pin  
Positive clock-edge triggered address, data, and control  
signal registers for fully pipelined applications  
4-word burst capability (interleaved or linear)  
Individual byte write (BW1 - BW4) control (May tie active)  
Three chip enables for simple depth expansion  
2.5V power supply (±5%)  
TheIDT71T75602/802containdataI/O,addressandcontrolsignal  
registers.Outputenableistheonlyasynchronoussignalandcanbeused  
todisabletheoutputsatanygiventime.  
A Clock Enable CEN pin allows operation of the IDT71T75602/802  
tobesuspendedaslongasnecessary.Allsynchronousinputsareignored  
when(CEN)ishighandtheinternaldeviceregisterswillholdtheirprevious  
values.  
2.5V I/O Supply (VDDQ)  
There are three chip enable pins (CE1, CE2, CE2) that allow the  
usertodeselectthedevicewhendesired.Ifanyoneofthesethreeisnot  
assertedwhenADV/LDislow,nonewmemoryoperationcanbeinitiated.  
However,anypendingdatatransfers(readsorwrites)willbecompleted.  
Power down controlled by ZZ input  
Boundary Scan JTAG Interface (IEEE 1149.1 Compliant)  
Packaged in a JEDEC standard 100-pin plastic thin quad  
flatpack (TQFP), 119 ball grid array (BGA)  
Pin Description Summary  
A
0-A19  
Address Inputs  
Input  
Input  
Input  
Input  
Input  
Input  
Input  
Input  
Input  
Input  
Input  
Input  
Output  
Input  
Input  
I/O  
Synchronous  
Synchronous  
Asynchronous  
Synchronous  
Synchronous  
Synchronous  
N/A  
Chip Enables  
CE1, CE  
2
, CE  
2
Output Enable  
OE  
R/W  
Read/Write Signal  
Clock Enable  
CEN  
Individual Byte Write Selects  
Clock  
BW  
1
, BW  
2
, BW  
3
, BW  
4
CLK  
ADV/LD  
LBO  
TMS  
TDI  
Advance burst address / Load new address  
Linear / Interleaved Burst Order  
Test Mode Select  
Test Data Input  
Synchronous  
Static  
N/A  
N/A  
TCK  
Test Clock  
N/A  
TDO  
TRST  
ZZ  
Test Data Input  
N/A  
JTAG Reset (Optional)  
Sleep Mode  
Asynchronous  
Synchronous  
Synchronous  
Static  
I/O  
0
-I/O31, I/OP1-I/OP4  
Data Input / Output  
Core Power, I/O Power  
Ground  
V
V
DD, VDDQ  
SS  
Supply  
Supply  
Static  
5313 tbl 01  
APRIL 2012  
1
©2012IntegratedDeviceTechnology,Inc.  
DSC-5313/10  

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