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7143LA90F PDF预览

7143LA90F

更新时间: 2024-02-04 20:33:06
品牌 Logo 应用领域
艾迪悌 - IDT 静态存储器内存集成电路
页数 文件大小 规格书
16页 137K
描述
Dual-Port SRAM, 2KX16, 90ns, CMOS, CQFP68, 1.180 X 1.180 INCH, 0.160 INCH HEIGHT, FP-68

7143LA90F 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:QFP
包装说明:QFF, QFL68,.95SQ针数:68
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8542.32.00.41风险等级:5.66
最长访问时间:90 nsI/O 类型:COMMON
JESD-30 代码:S-CQFP-F68JESD-609代码:e0
长度:24.0792 mm内存密度:32768 bit
内存集成电路类型:DUAL-PORT SRAM内存宽度:16
功能数量:1端口数量:2
端子数量:68字数:2048 words
字数代码:2000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:2KX16输出特性:3-STATE
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装代码:QFF
封装等效代码:QFL68,.95SQ封装形状:SQUARE
封装形式:FLATPACK并行/串行:PARALLEL
峰值回流温度(摄氏度):225电源:5 V
认证状态:Not Qualified座面最大高度:3.683 mm
最大待机电流:0.0015 A最小待机电流:2 V
子类别:SRAMs最大压摆率:0.25 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:FLAT
端子节距:1.27 mm端子位置:QUAD
处于峰值回流温度下的最长时间:20宽度:24.0792 mm
Base Number Matches:1

7143LA90F 数据手册

 浏览型号7143LA90F的Datasheet PDF文件第6页浏览型号7143LA90F的Datasheet PDF文件第7页浏览型号7143LA90F的Datasheet PDF文件第8页浏览型号7143LA90F的Datasheet PDF文件第10页浏览型号7143LA90F的Datasheet PDF文件第11页浏览型号7143LA90F的Datasheet PDF文件第12页 
IDT7133SA/LA,IDT7143SA/LA  
High-Speed 2K x 16 Dual-Port RAM  
Military, Industrial and Commercial Temperature Ranges  
AC Electrical Characteristics Over the  
OperatingTemperatureandSupplyVoltage(5)  
7133X20  
7143X20  
7133X25  
7143X25  
7133X35  
7143X35  
Com'l Only  
Com'l, Ind  
& Military  
Com'l, Ind  
& Military  
Symbol  
Parameter  
Min.  
Max.  
Min.  
Max.  
Min.  
Max.  
Unit  
WRITE CYCLE  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
t
WC  
EW  
AW  
AS  
WP  
WR  
DW  
HZ  
DH  
WZ  
OW  
Write Cycle Time(3)  
20  
15  
15  
0
25  
20  
20  
0
35  
25  
25  
0
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
t
Chip Enable to End-of-Write  
Address Valid to End-of-Write  
Address Set-up Time  
Write Pulse Width  
t
t
t
15  
0
20  
0
25  
0
t
Write Recovery Time  
Data Valid to End-of-Write  
Output High-Z Time(1,2)  
Data Hold Time(4)  
t
15  
15  
20  
____  
____  
____  
t
12  
15  
20  
____  
____  
____  
t
0
0
0
(1,2)  
____  
____  
____  
t
Write Enable to Output in High-Z  
Output Active from End-of-Write(1, 2,4)  
12  
15  
20  
____  
____  
____  
t
0
0
0
ns  
2746 tbl 11a  
7133X45  
7133X55  
7133X70/90  
7143X45  
Com'l &  
Military  
7143X55  
Com'l, Ind  
& Military  
7143X70/90  
Com'l &  
Military  
Symbol  
WRITE CYCLE  
Parameter  
Min.  
Max.  
Min.  
Max.  
Min.  
Max.  
Unit  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
t
WC  
EW  
AW  
AS  
WP  
WR  
DW  
HZ  
DH  
WZ  
OW  
Write Cycle Time(3)  
45  
30  
30  
0
55  
40  
40  
0
70/90  
50/50  
50/50  
0/0  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
t
Chip Enable to End-of-Write  
Address Valid to End-of-Write  
Address Set-up Time  
Write Pulse Width  
t
t
t
30  
0
40  
0
50/50  
0/0  
t
Write Recovery Time  
Data Valid to End-of-Write  
Output High-Z Time(1,2)  
Data Hold Time(4)  
t
20  
25  
30/30  
____  
____  
____  
t
20  
20  
25/25  
____  
____  
____  
t
5
5
5/5  
(1,2)  
____  
____  
____  
t
Write Enable to Output in High-Z  
20  
20  
25/25  
____  
____  
____  
t
Output Active from End-of-Write(1, 2,4)  
5
5
5/5  
ns  
2746 tbl 11b  
NOTES:  
1. Transition is measured 0mV from Low or High-impedance voltage from the Output Test Load (Figure 2).  
2. This parameter is guaranteed by device characterization but not production tested.  
3. For MASTER/SLAVE combination, tWC = tBAA + tWR + tWP, since R/W = VIL must occur after tBAA.  
4. The specification for tDH must be met by the device supplying write data to the RAM under all operation conditions. Although tDH and tOW values will very over voltage and  
temperature, the actual tDH will always be smaller than the actual tOW.  
5. 'X' in part number indicates power rating (SA or LA).  
9
6.42  

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