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71124S12Y PDF预览

71124S12Y

更新时间: 2024-01-31 13:06:38
品牌 Logo 应用领域
艾迪悌 - IDT /
页数 文件大小 规格书
8页 1119K
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71124S12Y 数据手册

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IDT71124  
CMOS Static RAM  
1 Meg (128K x 8-Bit)  
Revolutionary Pinout  
Description  
Features  
The IDT71124 is a 1,048,576-bit high-speed static RAM orga-  
nized as 128K x 8. It is fabricated using IDTs high-performance,  
high-reliability CMOS technology. This state-of-the-art technology,  
combined with innovative circuit design techniques, provides a cost-  
effective solution for high-speed memory needs. The JEDEC  
centerpower/GND pinout reduces noise generation and improves  
system performance.  
128K x 8 advanced high-speed CMOS static RAM  
JEDEC revolutionary pinout (center power/GND) for  
reduced noise.  
Equal access and cycle times  
– Commercial and Industrial: 12/15/20ns  
One Chip Select plus one Output Enable pin  
Bidirectional inputs and outputs directly TTL-compatible  
Low power consumption via chip deselect  
The IDT71124 has an output enable pin which operates as fast  
as 6ns, with address access times as fast as 12ns available. All  
bidirectional inputs and outputs of the IDT71124 are TTL-compatible  
and operation is from a single 5V supply. Fully static asynchronous  
circuitry is used; no clocks or refreshes are required for operation.  
The IDT71124 is packaged in a 32-pin 400 mil Plastic SOJ.  
Available in a 32-pin 400 mil Plastic SOJ.  
Functional Block Diagram  
A0  
1,048,576-BIT  
MEMORY ARRAY  
ADDRESS  
DECODER  
A16  
8
8
I/O0 - I/O7  
I/O CONTROL  
,
8
WE  
OE  
CS  
CONTROL  
LOGIC  
3514 drw 01  
2008  
OCTOBER  
1
©2000IntegratedDeviceTechnology,Inc.  
DSC-3514/10  

71124S12Y 替代型号

型号 品牌 替代类型 描述 数据表
IS63LV1024L-12JL ISSI

类似代替

128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT

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