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70V9159L6BFG8 PDF预览

70V9159L6BFG8

更新时间： 2024-02-10 17:45:28
品牌 Logo 应用领域
艾迪悌 - IDT 静态存储器内存集成电路
页数 文件大小 规格书
16页 205K
描述
HIGH-SPEED 3.3V SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM

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70V9159L6BFG8 技术参数

生命周期：Obsolete包装说明：BGA,
Reach Compliance Code：compliantHTS代码：8542.32.00.41
风险等级：5.84最长访问时间：6.5 ns
其他特性：PIPELINED OR FLOW THROUGH ARCHITECTUREJESD-30 代码：S-PBGA-B100
内存密度：73728 bit内存集成电路类型：DUAL-PORT SRAM
内存宽度：9功能数量：1
端子数量：100字数：8192 words
字数代码：8000工作模式：SYNCHRONOUS
最高工作温度：70 °C最低工作温度：
组织：8KX9封装主体材料：PLASTIC/EPOXY
封装代码：BGA封装形状：SQUARE
封装形式：GRID ARRAY并行/串行：PARALLEL
最大供电电压 (Vsup)：3.6 V最小供电电压 (Vsup)：3 V
标称供电电压 (Vsup)：3.3 V表面贴装：YES
技术：CMOS温度等级：COMMERCIAL
端子形式：BALL端子位置：BOTTOM
Base Number Matches：1

70V9159L6BFG8 数据手册

 浏览型号70V9159L6BFG8的Datasheet PDF文件第2页浏览型号70V9159L6BFG8的Datasheet PDF文件第3页浏览型号70V9159L6BFG8的Datasheet PDF文件第4页浏览型号70V9159L6BFG8的Datasheet PDF文件第6页浏览型号70V9159L6BFG8的Datasheet PDF文件第7页浏览型号70V9159L6BFG8的Datasheet PDF文件第8页 
IDT70V9169/59L  
High-Speed 3.3V 16/8K x 9 Dual-Port Synchronous Pipelined Static RAM  
Industrial and Commercial Temperature Ranges  
Truth Table II—Address Counter Control(1,2)  
Previous Internal  
External  
Address  
Internal  
Address  
Address  
Used  
MODE  
CLK  
↑
I/O(3)  
DI/O (n) External Address Used  
ADS CNTEN CNTRST  
An  
X
X
An  
An  
L(4)  
H
X
H
H
An + 1  
An + 1  
L(5)  
H
D
I/O(n+1) Counter Enabled—Internal Address generation  
↑
X
An + 1  
X
↑
H
H
D
I/O(n+1) External Address Blocked—Counter disabled (An + 1 reused)  
X
A
0
X
X
L(4)  
DI/O(0)  
Counter Reset to Address 0  
↑
5655 tbl 03  
NOTES:  
1. "H" = VIH, "L" = VIL, "X" = Don't Care.  
2. CE0, LB, UB, and OE = VIL; CE1 and R/W = VIH.  
3. Outputs configured in Flow-Through Output mode: if outputs are in Pipelined mode the data out will be delayed by one cycle.  
4. ADS and CNTRST are independent of all other signals including CE0, CE1, UB and LB.  
5. The address counter advances if CNTEN = VIL on the rising edge of CLK, regardless of all other signals including CE0, CE1, UB and LB.  
Recommended DC Operating  
Conditions  
Recommended Operating  
Temperature and Supply Voltage  
Symbol  
Parameter  
Supply Voltage  
Ground  
Min.  
Typ.  
Max.  
Unit  
V
Ambient  
Grade  
Commercial  
Temperature(1)  
0OC to +70OC  
-40OC to +85OC  
GND  
0V  
VDD  
V
V
DD  
SS  
3.0  
3.3  
3.6  
3.3V  
3.3V  
+
+
0.3V  
0
0
0
V
Industrial  
0V  
0.3V  
____  
V
IH  
IL  
Input High Voltage  
Input Low Voltage  
2.0  
V
DD+0.3V(2)  
0.8  
V
5655 tbl 04  
-0.3(1)  
V
____  
V
NOTES:  
1. This is the parameter TA. This is the "instant on" case temperature.  
5655 tbl 05  
NOTES:  
1. VIL > -1.5V for pulse width less than 10 ns.  
2. VTERM must not exceed VDD+0.3V.  
Absolute Maximum Ratings(1)  
Capacitance(1)  
(TA = +25°C, f = 1.0MHZ)  
Symbol  
Rating  
Commercial  
& Industrial  
Unit  
Symbol  
Parameter  
Input Capacitance  
Output Capacitance  
Conditions(2)  
IN = 3dV  
OUT = 3dV  
Max. Unit  
(2)  
V
TERM  
Terminal Voltage  
with Respect to  
GND  
-0.5 to +4.6  
V
CIN  
V
9
pF  
(3)  
OUT  
C
V
10  
pF  
T
BIAS  
Temperature  
Under Bias  
-55 to +125  
-65 to +150  
50  
oC  
oC  
5655 tbl 07  
NOTES:  
1. These parameters are determined by device characterization, but are not  
production tested.  
TSTG  
Storage  
Temperature  
2. 3dV references the interpolated capacitance when the input and output switch  
from 0V to 3V or from 3V to 0V.  
IOUT  
DC Output Current  
mA  
3. COUT also references CI/O.  
5655 tbl 06  
NOTES:  
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may  
cause permanent damage to the device. This is a stress rating only and functional  
operation of the device at these or any other conditions above those indicated  
in the operational sections of this specification is not implied. Exposure to absolute  
maximum rating conditions for extended periods may affect reliability.  
2. VTERM must not exceed VDD +0.3V for more than 25% of the cycle time or 10ns  
maximum, and is limited to < 20mA for the period of VTERM > VDD + 0.3V.  
6.42  
5
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