IDT70V9089/79S/L
High Speed 3.3V 64/32K x 8 Synchronous Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
RecommendedDCOperating
RecommendedOperating
TemperatureandSupplyVoltage(1)
Ambient
Conditions
Symbol
Parameter
Min.
3.0
Typ.
Max.
Unit
V
Grade
Temperature
0OC to +70OC
-40OC to +85OC
GND
VDD
VDD
SS
Supply Voltage
Ground
3.3
3.6
Commercial
0V
3.3V
3.3V
+
0.3V
V
0
0
0
V
Industrial
0V
+
0.3V
____
V
IH
IL
Input High Voltage
Input Low Voltage
2.2
V
DD + 0.3V(1)
0.8
V
3750 tbl 04
____
V
-0.3(2)
V
NOTES:
1. This is the parameter TA. This is the "instant on" case temperature.
3750 tbl 05
NOTES:
1. VTERM must not exceed VDD +0.3V.
2. VIL > -1.5V for pulse width less than 10ns.
AbsoluteMaximumRatings(1)
Capacitance (TA = +25°C, f = 1.0MHz)
Symbol
Parameter(1)
Input Capacitance
Output Capacitance
Conditions(2 )
IN = 3dV
OUT = 3dV
Max. Unit
Symbol
Rating
Commercial
& Industrial
Unit
CIN
V
9
pF
(2)
VTERM
Terminal Voltage
with Respect
to GND
-0.5 to +4.6
-55 to +125
V
(3 )
OUT
C
V
10
pF
3750 tbl 07
NOTES:
TBIAS
Temperature
Under Bias
oC
1. These parameters are determined by device characterization, but are not
production tested.
2. 3dV references the interpolated capacitance when the input and output switch
from 0V to 3V or from 3V to 0V.
3. COUT also references CI/O.
T
STG
JN
OUT
Storage Temperature
Junction Temperature
DC Output Current
-65 to +150
+150
oC
oC
T
I
50
mA
3750 tbl 06
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated
in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
2. VTERM must not exceed VDD +0.3V for more than 25% of the cycle time or 10ns
maximum, and is limited to < 20mA for the period of VTERM > VDD + 0.3V.
3. Ambient Temperature Under Bias. Chip Deselected.
4
6.42