Datasheet > 70V7599S133BFGI

70V7599S133BFGI

更新时间： 2024-02-17 17:08:10

品牌	Logo	应用领域
艾迪悌 - IDT		/
页数	文件大小	规格书
22页	755K
描述
HIGH-SPEED 3.3V 128K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM

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70V7599S133BFGI 数据手册

IDT70V7599S

High-Speed 128K x 36 Synchronous Bank-Switchable Dual-Port Static RAM

Industrial and Commercial Temperature Ranges

2.5V

AC Test Conditions (VDDQ - 3.3V/2.5V)

Input Pulse Levels (Address & Controls)

Input Pulse Levels (I/Os)

Input Rise/Fall Times

GND to 3 0V/GND to 2.4V

GND to 3.0V/GND to 2.4V

2ns

833Ω

Input Timing Reference Levels

Output Reference Levels

Output Load

1.5V/1.25V

DATAOUT

1.5V/1.25V

5pF*

770Ω

Figures 1 and 2

5626 tbl 10

3.3V

590Ω

5pF*

50Ω

DATAOUT

1.5V/1.25

10pF

(Tester)

435Ω

5626 drw 03

Figure 1. AC Output Test load.

5626 drw 04

Figure 2. Output Test Load

(For tCKLZ, tCKHZ, tOLZ, and tOHZ).

*Including scope and jig.

10.5pF is the I/O capacitance of this

device, and 10pF is the AC Test Load

Capacitance.

∆tCD

(Typical, ns)

•

20.5

80 100

200

-1

Capacitance (pF)

5626 drw 05

Figure 3. Typical Output Derating (Lumped Capacitive Load).

6.42

1...7 8 91011 12 13...22

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