是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | BGA, BGA256,16X16,40 | Reach Compliance Code: | compliant |
HTS代码: | 8542.32.00.41 | 风险等级: | 5.74 |
最长访问时间: | 3.6 ns | 其他特性: | PIPELINED OR FLOW THROUGH ARCHITECTURE |
最大时钟频率 (fCLK): | 166 MHz | I/O 类型: | COMMON |
JESD-30 代码: | S-PBGA-B256 | 内存密度: | 4718592 bit |
内存集成电路类型: | DUAL-PORT SRAM | 内存宽度: | 36 |
功能数量: | 1 | 端口数量: | 2 |
端子数量: | 256 | 字数: | 131072 words |
字数代码: | 128000 | 工作模式: | SYNCHRONOUS |
最高工作温度: | 85 °C | 最低工作温度: | -40 °C |
组织: | 128KX36 | 输出特性: | 3-STATE |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | BGA |
封装等效代码: | BGA256,16X16,40 | 封装形状: | SQUARE |
封装形式: | GRID ARRAY | 并行/串行: | PARALLEL |
电源: | 2.5/3.3,3.3 V | 认证状态: | Not Qualified |
最大待机电流: | 0.04 A | 最小待机电流: | 3.15 V |
子类别: | SRAMs | 最大压摆率: | 0.83 mA |
最大供电电压 (Vsup): | 3.45 V | 最小供电电压 (Vsup): | 3.15 V |
标称供电电压 (Vsup): | 3.3 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | INDUSTRIAL |
端子形式: | BALL | 端子节距: | 1 mm |
端子位置: | BOTTOM | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
70V7599S166BCGI8 | IDT |
获取价格 |
HIGH-SPEED 3.3V 128K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM | |
70V7599S166BCI | IDT |
获取价格 |
HIGH-SPEED 3.3V 128K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2. | |
70V7599S166BF | IDT |
获取价格 |
HIGH-SPEED 3.3V 128K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2. | |
70V7599S166BFG | IDT |
获取价格 |
Dual-Port SRAM | |
70V7599S166BFG8 | IDT |
获取价格 |
Dual-Port SRAM | |
70V7599S166BFGI | IDT |
获取价格 |
HIGH-SPEED 3.3V 128K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM | |
70V7599S166BFGI8 | IDT |
获取价格 |
HIGH-SPEED 3.3V 128K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM | |
70V7599S166BFI | IDT |
获取价格 |
HIGH-SPEED 3.3V 128K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2. | |
70V7599S166DR | IDT |
获取价格 |
HIGH-SPEED 3.3V 128K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2. | |
70V7599S166DRG | IDT |
获取价格 |
HIGH-SPEED 3.3V 128K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM |