是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 包装说明: | BGA, BGA256,16X16,40 |
Reach Compliance Code: | compliant | 风险等级: | 5.28 |
最长访问时间: | 3.4 ns | 最大时钟频率 (fCLK): | 200 MHz |
I/O 类型: | COMMON | JESD-30 代码: | S-PBGA-B256 |
JESD-609代码: | e1 | 内存密度: | 4718592 bit |
内存集成电路类型: | DUAL-PORT SRAM | 内存宽度: | 36 |
湿度敏感等级: | 3 | 功能数量: | 1 |
端口数量: | 2 | 端子数量: | 256 |
字数: | 131072 words | 字数代码: | 128000 |
工作模式: | SYNCHRONOUS | 最高工作温度: | 70 °C |
最低工作温度: | 组织: | 128KX36 | |
输出特性: | 3-STATE | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | BGA | 封装等效代码: | BGA256,16X16,40 |
封装形状: | SQUARE | 封装形式: | GRID ARRAY |
并行/串行: | PARALLEL | 峰值回流温度(摄氏度): | 225 |
电源: | 2.5,2.5/3.3 V | 认证状态: | Not Qualified |
最大待机电流: | 0.015 A | 最小待机电流: | 2.4 V |
子类别: | SRAMs | 最大压摆率: | 0.525 mA |
最大供电电压 (Vsup): | 2.6 V | 最小供电电压 (Vsup): | 2.4 V |
标称供电电压 (Vsup): | 2.5 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | COMMERCIAL |
端子面层: | Tin/Silver/Copper (Sn/Ag/Cu) | 端子形式: | BALL |
端子节距: | 1 mm | 端子位置: | BOTTOM |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
70T3599S200BCGI | IDT |
获取价格 |
HIGH-SPEED SYNCHRONOUS DUAL-PORT STATIC RAM |
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70T3599S200BCGI8 | IDT |
获取价格 |
HIGH-SPEED SYNCHRONOUS DUAL-PORT STATIC RAM |
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70T3599S200BFG | IDT |
获取价格 |
HIGH-SPEED 2.5V 256/128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM |
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70T3599S200BFG8 | IDT |
获取价格 |
HIGH-SPEED 2.5V 256/128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM |
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70T3599S200BFGI | IDT |
获取价格 |
HIGH-SPEED 2.5V 256/128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM |
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70T3599S200BFGI8 | IDT |
获取价格 |
HIGH-SPEED 2.5V 256/128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM |
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70T3599S200DRG | IDT |
获取价格 |
HIGH-SPEED 2.5V 256/128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM |
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70T3599S200DRG8 | IDT |
获取价格 |
HIGH-SPEED 2.5V 256/128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM |
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70T3599S200DRGI | IDT |
获取价格 |
HIGH-SPEED 2.5V 256/128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM |
![]() |
70T3599S200DRGI8 | IDT |
获取价格 |
HIGH-SPEED 2.5V 256/128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM |
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