Datasheet > 70MT060WHTAPBF

70MT060WHTAPBF

更新时间： 2024-02-14 21:45:16

品牌	Logo	应用领域
威世 - VISHAY		双极性晶体管
页数	文件大小	规格书
9页	153K
描述
'Half Bridge' IGBT MTP (Warp 2 Speed IGBT), 70 A

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70MT060WHTAPBF 数据手册

70MT060WHTAPbF

Vishay Semiconductors

www.vishay.com

“Half Bridge” IGBT MTP (Warp 2 Speed IGBT), 70 A

FEATURES

• NPT warp 2 speed IGBT technology with

positive temperature coefficient

• HEXFRED^®antiparallel diodes with ultrasoft

reverse recovery

• SMD thermistor (NTC)

• Al₂O₃BDC

• Very low stay inductance design for high speed operation

MTP

• UL pending

• Speed 60 kHz to 150 kHz

• UL approved file E78996

• Compliant to RoHS directive 2002/95/EC

• Designed and qualified for industrial level

PRODUCT SUMMARY

V_CES

600 V

2.1 V

70 A

BENEFITS

V_CE(on)typical at V_GE= 15 V

I_Cat T_C= 78 °C

• Optimized for welding, UPS and SMPS applications

• Lower coduction losses and switching losses

• Low EMI, requires less snubbing

• Direct mounting to heatsink

• PCB solderable terminals

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

MAX.

600

100

UNITS

Collector to emitter voltage

V_CES

T_C= 25 °C

Continuous collector current

I_C

T_C= 78 °C

Pulsed collector current

Peak switching current

I_CM

I_LM

300

Diode continuous forward current

Peak diode forward current

Gate to emitter voltage

I_F

I_FM

200

V_GE

V_ISOL

RMS isolation voltage

Any terminal to case, t = 1 min

T_C= 25 °C

2500

347

139

Maximum power dissipation, IGBT

P_D

_C= 100 °C

Revision: 05-Jul-11

Document Number: 94469

For technical questions, contact: indmodules@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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