Datasheet > 7025L15GGI8

7025L15GGI8

更新时间： 2022-05-14 22:07:41

品牌	Logo	应用领域
艾迪悌 - IDT		/
页数	文件大小	规格书
22页	201K
描述
HIGH-SPEED 8K x 16 DUAL-PORT STATIC RAM

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7025L15GGI8 数据手册

IDT7025S/L

High-Speed 8K x 16 Dual-Port Static RAM

Military, Industrial and Commercial Temperature Ranges

Data Retention Characteristics Over All Temperature Ranges

(L Version Only)

Symbol

Parameter

Test Condition

Min.

Typ.⁽¹⁾

Max.

Unit

___

CC for Data Retention

CC = 2V

2.0

___

ICCDR

Data Retention Current

µA

CE > VHC

IN > VHC or < VLC

MIL. & IND.

COM'L.

100

4000

___

100

1500

(3)

___

CDR

Chip Deselect to Data Retention Time

Operation Recovery Time

SEM > VHC

(3)

(2)

___

2683 tbl 10

NOTES:

1. TA = +25°C, VCC = 2V, and are not production tested.

2. tRC = Read Cycle Time

3. This parameter is guaranteed by device characterization, but is not production tested.

4. At Vcc < 2.0V input leakages are undefined.

Data Retention Waveform

DATA RETENTION MODE

VDR

≥

4.5V

VCC

tCDR

VDR

VIH

2683 drw 05

AC Test Conditions

Input Pulse Levels

GND to 3.0V

5ns Max.

1.5V

Input Rise/Fall Times

Input Timing Reference Levels

Output Reference Levels

Output Load

1.5V

Figures 1 and 2

2683 tbl 11

893Ω

DATAOUT

BUSY

INT

DATAOUT

30pF

347Ω

5pF*

347Ω

2683 drw 06

Figure 2. Output Test Load

(for t^LZ, tHZ, tWZ, tOW)

* including scope and jig.

Figure 1. AC Output Test Load

6.482

1...5 6 789 10 11...22

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