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7007L25PF9 PDF预览

7007L25PF9

更新时间: 2024-02-10 10:49:54
品牌 Logo 应用领域
艾迪悌 - IDT 静态存储器内存集成电路
页数 文件大小 规格书
21页 184K
描述
Dual-Port SRAM, 32KX8, 25ns, CMOS, PQFP80, 14 X 14 MM, 1.40 MM HEIGHT, TQFP-80

7007L25PF9 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:QFP
包装说明:14 X 14 MM, 1.40 MM HEIGHT, TQFP-80针数:80
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.41风险等级:5.76
最长访问时间:25 ns其他特性:INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN
JESD-30 代码:S-PQFP-G80JESD-609代码:e0
长度:14 mm内存密度:262144 bit
内存集成电路类型:DUAL-PORT SRAM内存宽度:8
湿度敏感等级:3功能数量:1
端子数量:80字数:32768 words
字数代码:32000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:32KX8封装主体材料:PLASTIC/EPOXY
封装代码:LQFP封装形状:SQUARE
封装形式:FLATPACK, LOW PROFILE并行/串行:PARALLEL
峰值回流温度(摄氏度):240认证状态:Not Qualified
座面最大高度:1.6 mm最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:TIN LEAD
端子形式:GULL WING端子节距:0.65 mm
端子位置:QUAD处于峰值回流温度下的最长时间:20
宽度:14 mmBase Number Matches:1

7007L25PF9 数据手册

 浏览型号7007L25PF9的Datasheet PDF文件第4页浏览型号7007L25PF9的Datasheet PDF文件第5页浏览型号7007L25PF9的Datasheet PDF文件第6页浏览型号7007L25PF9的Datasheet PDF文件第8页浏览型号7007L25PF9的Datasheet PDF文件第9页浏览型号7007L25PF9的Datasheet PDF文件第10页 
IDT7007S/L  
High-Speed 32K x 8 Dual-Port Static RAM  
Military, Industrial and Commercial Temperature Ranges  
DC Electrical Characteristics Over the Operating  
Temperature and Supply Voltage Range(1) (con't.) (VCC = 5.0V ± 10%)  
7007X35  
Com'l, Ind  
& Military  
7007X55  
Com'l, Ind  
& Military  
Symbol  
Parameter  
Test Condition  
Version  
COM'L  
Typ.(2)  
Max.  
Typ.(2)  
Max.  
Unit  
ICC  
Dynamic Operating Current  
(Both Ports Active)  
S
L
160  
160  
295  
255  
150  
150  
270  
230  
mA  
CE = VIL, Outputs Disabled  
SEM = VIH  
(3)  
f = fMAX  
MIL &  
IND  
S
L
160  
160  
335  
295  
150  
150  
310  
270  
I
SB1  
Standby Current  
(Both Ports - TTL Level  
Inputs)  
COM'L  
S
L
20  
20  
85  
60  
20  
20  
85  
60  
mA  
mA  
CE  
SEM  
f = fMAX  
L
= CE  
R
= VIH  
= VIH  
R
= SEM  
L
(3)  
MIL &  
IND  
S
L
20  
20  
100  
80  
13  
13  
100  
80  
(5)  
ISB2  
Standby Current  
(One Port - TTL Level Inputs)  
COM'L  
S
L
95  
95  
185  
155  
85  
85  
165  
135  
CE"A" = VIL and CE"B" = VIH  
Active Port Outputs Disabled,  
(3)  
f=fMAX  
MIL &  
IND  
S
L
95  
95  
215  
185  
85  
85  
195  
165  
SEM  
R
= SEML = VIH  
I
SB3  
Full Standby Current (Both  
Ports - All CMOS Level  
Inputs)  
Both Ports CE  
CE > VCC - 0.2V  
IN > VCC - 0.2V or  
VIN < 0.2V, f = 0(4)  
SEM = SEM > VCC - 0.2V  
L
and  
COM'L  
S
L
1.0  
0.2  
15  
5
1.0  
0.2  
15  
5
mA  
mA  
R
V
MIL &  
IND  
S
L
1.0  
0.2  
30  
10  
1.0  
0.2  
30  
10  
R
L
ISB4  
Full Standby Current  
(One Port - All CMOS Level  
Inputs)  
COM'L  
S
L
90  
90  
160  
135  
80  
80  
135  
110  
CE"A" < 0.2V and  
(5)  
CE"B" > VCC - 0.2V  
SEM = SEM > VCC - 0.2V  
IN > VCC - 0.2V or VIN < 0.2V  
R
L
MIL &  
IND  
S
L
90  
90  
190  
165  
80  
80  
165  
140  
V
Active Port Outputs Disabled  
(3)  
f = fMAX  
2940 tbl 10  
NOTES:  
1. 'X' in part numbers indicates power rating (S or L)  
2. VCC = 5V, TA = +25°C, and are not production tested. ICCDC = 120mA (Typ.)  
3. At f = fMAX, address and control lines (except Output Enable) are cycling at the maximum frequency read cycle of 1/tRC, and using  
“AC Test Conditions” of input levels of GND to 3V.  
4. f = 0 means no address or control lines change.  
5. Port "A" may be either left or right port. Port "B" is the opposite from port "A".  
7

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