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7005S70FGB8 PDF预览

7005S70FGB8

更新时间: 2024-01-21 19:11:56
品牌 Logo 应用领域
艾迪悌 - IDT 静态存储器内存集成电路
页数 文件大小 规格书
21页 358K
描述
Dual-Port SRAM, 8KX8, 70ns, CMOS, PQFP68, 0.970 X 0.970 INCH, 0.080 INCH HEIGHT, GREEN, QFP-68

7005S70FGB8 技术参数

生命周期:Active包装说明:QFF,
Reach Compliance Code:compliant风险等级:5.59
最长访问时间:70 nsJESD-30 代码:S-PQFP-F68
JESD-609代码:e3长度:24.2062 mm
内存密度:65536 bit内存集成电路类型:DUAL-PORT SRAM
内存宽度:8功能数量:1
端子数量:68字数:8192 words
字数代码:8000工作模式:ASYNCHRONOUS
最高工作温度:125 °C最低工作温度:-55 °C
组织:8KX8封装主体材料:PLASTIC/EPOXY
封装代码:QFF封装形状:SQUARE
封装形式:FLATPACK并行/串行:PARALLEL
认证状态:Not Qualified座面最大高度:4.572 mm
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:MILITARY
端子面层:MATTE TIN端子形式:FLAT
端子节距:0.8 mm端子位置:QUAD
宽度:24.2062 mmBase Number Matches:1

7005S70FGB8 数据手册

 浏览型号7005S70FGB8的Datasheet PDF文件第3页浏览型号7005S70FGB8的Datasheet PDF文件第4页浏览型号7005S70FGB8的Datasheet PDF文件第5页浏览型号7005S70FGB8的Datasheet PDF文件第7页浏览型号7005S70FGB8的Datasheet PDF文件第8页浏览型号7005S70FGB8的Datasheet PDF文件第9页 
IDT7005S/L  
High-Speed 8K x 8 Dual-Port Static RAM  
Military, Industrial and Commercial Temperature Ranges  
DC Electrical Characteristics Over the Operating  
Temperature and Supply Voltage Range(1) (VCC = 5.0V ± 10%)  
7005X15  
7005X17  
7005X20  
Com'l, Ind  
& Military  
7005X25  
Com'l &  
Military  
Com'l Only  
Com'l Only  
Symbol  
Parameter  
Test Condition  
Version  
COM'L  
Typ.(2)  
Max.  
Typ.(2)  
Max.  
Typ.(2)  
Max.  
Typ.(2)  
Max.  
Unit  
ICC  
Dynamic Operating Current  
(Both Ports Active)  
S
L
170  
160  
310  
260  
170  
160  
310  
260  
160  
150  
290  
240  
155  
145  
265  
220  
mA  
CE = VIL, Outputs Disabled  
SEM = VIH  
(3)  
f = fMAX  
____  
____  
____  
____  
____  
____  
____  
____  
MIL &  
IND  
S
L
160  
150  
370  
320  
155  
145  
340  
280  
I
SB1  
Standby Current  
(Both Ports - TTL  
Level Inputs)  
COM'L  
S
L
20  
10  
60  
60  
20  
10  
60  
50  
20  
10  
60  
50  
16  
10  
60  
50  
mA  
mA  
CE  
SEM  
f = fMAX  
L
= CE  
R
= VIH  
= VIH  
R
= SEM  
L
(3)  
____  
____  
____  
____  
____  
____  
____  
____  
MIL &  
IND  
S
L
20  
10  
90  
70  
16  
10  
80  
65  
(5)  
ISB2  
Standby Current  
(One Port - TTL  
Level Inputs)  
COM'L  
S
L
105  
95  
190  
160  
105  
95  
190  
160  
95  
85  
180  
150  
90  
80  
170  
140  
CE"A" = VIL and CE"B" = VIH  
Active Port Outputs Disabled  
(3)  
f=fMAX  
____  
____  
____  
____  
____  
____  
____  
____  
MIL &  
IND  
S
L
95  
85  
240  
210  
90  
80  
215  
180  
SEM  
R
= SEM  
L
= VIH  
I
SB3  
Full Standby Current (Both  
Ports - All CMOS Level  
Inputs)  
Both Ports CE  
L
and  
COM'L  
S
L
1.0  
0.2  
15  
5
1.0  
0.2  
15  
5
1.0  
0.2  
15  
5
1.0  
0.2  
15  
5
mA  
mA  
CE  
R
> VCC - 0.2V  
V
V
IN > VCC - 0.2V or  
IN < 0.2V, f = 0(4)  
____  
____  
____  
____  
____  
____  
____  
____  
MIL &  
IND  
S
L
1.0  
0.2  
30  
10  
1.0  
0.2  
30  
10  
SEMR = SEML > VCC - 0.2V  
ISB4  
Full Standby Current  
(One Port - All  
CMOS Level Inputs)  
COM'L  
S
L
100  
90  
170  
140  
100  
90  
170  
140  
90  
80  
155  
130  
85  
75  
145  
120  
CE"A" < 0.2V and  
CE"B" > VCC - 0.2V(5)  
SEMR = SEML > VCC - 0.2V  
____  
____  
____  
____  
____  
____  
____  
____  
MIL &  
IND  
S
L
90  
80  
225  
200  
85  
75  
200  
170  
V
IN > VCC - 0.2V or VIN < 0.2V  
Active Port Outputs Disabled  
(3)  
f = fMAX  
2738 tbl 10  
7005X35  
Com'l, Ind  
& Military  
7005X55  
Com'l, Ind  
& Military  
7005X70  
Military  
Only  
Symbol  
Parameter  
Test Condition  
Version  
Typ.(2)  
Max.  
Typ.(2)  
Max.  
Typ.(2 )  
Max.  
Unit  
____  
____  
____  
____  
ICC  
Dynamic Operating  
Current  
(Both Ports Active)  
COM'L  
S
L
150  
140  
250  
210  
150  
140  
250  
210  
mA  
CE = VIL, Outputs Disabled  
SEM = VIH  
(3)  
f = fMAX  
MIL &  
IND  
S
L
150  
140  
300  
250  
150  
140  
300  
250  
140  
130  
300  
250  
____  
____  
____  
____  
I
SB1  
Standby Current  
(Both Ports - TTL  
Level Inputs)  
COM'L  
S
L
13  
10  
60  
50  
13  
10  
60  
50  
mA  
mA  
CE  
SEM  
f = fMAX  
L
= CE  
R
= VIH  
= VIH  
R
= SEM  
L
(3)  
MIL &  
IND  
S
L
13  
10  
80  
65  
13  
10  
80  
65  
10  
8
80  
65  
(5)  
____  
____  
____  
____  
ISB2  
Standby Current  
(One Port - TTL  
Level Inputs)  
COM'L  
S
L
85  
75  
155  
130  
85  
75  
155  
130  
CE"A" = VIL and CE"B" = VIH  
Active Port Outputs Disabled  
(3)  
f=fMAX  
85  
75  
MIL &  
IND  
S
L
190  
160  
85  
75  
190  
160  
80  
70  
190  
160  
SEM  
R
= SEM  
L
= VIH  
____  
____  
____  
____  
I
SB3  
Full Standby Current  
(Both Ports - All  
Both Ports CE  
L
and  
COM'L  
S
L
1.0  
0.2  
15  
5
1.0  
0.2  
15  
5
mA  
mA  
CER  
> VCC - 0.2V  
IN > VCC - 0.2V or  
IN < 0.2V, f = 0(4)  
= SEM > VCC - 0.2V  
CMOS Level Inputs)  
V
V
SEM  
MIL &  
IND  
S
L
1.0  
0.2  
30  
10  
1.0  
0.2  
30  
10  
1.0  
0.2  
30  
10  
R
L
____  
____  
____  
____  
ISB4  
Full Standby Current  
(One Port - All  
CMOS Level Inputs)  
COM'L  
S
L
80  
70  
135  
110  
80  
70  
135  
110  
CE"A" < 0.2V and  
CE"B" > VCC - 0.2V(5)  
SEMR = SEML > VCC - 0.2V  
MIL &  
IND  
S
L
80  
70  
175  
150  
80  
70  
175  
150  
75  
65  
175  
150  
V
IN > VCC - 0.2V or VIN < 0.2V  
Active Port Outputs Disabled  
(3)  
f = fMAX  
2738 tbl 11  
NOTES:  
1. 'X' in part number indicates power rating (S or L)  
2. VCC = 5V, TA = +25°C and are not production tested. ICC DC = 120mA (typ)  
3. At f = fMAX, address and I/O'S are cycling at the maximum frequency read cycle of 1/tRC, and using “AC Test Conditions” of input levels of GND to 3V.  
4. f = 0 means no address or control lines change.  
5. Port "A" may be either left or right port. Port "B" is the port opposite port "A".  
6.42  
6

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