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6R3R15W105MV4E PDF预览

6R3R15W105MV4E

更新时间: 2022-12-29 20:43:39
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约翰逊 - JOHANSON /
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2页 129K
描述
Tanceram® Chip Capacitors

6R3R15W105MV4E 数据手册

 浏览型号6R3R15W105MV4E的Datasheet PDF文件第2页 
t
anceram®  
cHIP  
caPacItors  
TANCERAM® chip capacitors can replace tantalum capacitors  
in many applications and offer several key advantages over  
traditional tantalums. Because TANCERAM® capacitors exhibit  
extremely low ESR, equivalent circuit performance can often be  
achieved using considerably lower capacitance values. Low  
DC leakage reduces current drain, extending the battery life of  
portable products. TANCERAM® high DC breakdown voltage  
ratings offer improved reliability and eliminate large voltage  
de-rating common when designing with tantalums.  
adVantageS  
• Low ESR  
• Low DC Leakage  
• Higher Surge Voltage  
• Reduced CHIP Size  
• Non-polarized Devices  
• Improved Reliability  
• Higher Insulation Resistance • Higher Ripple Current  
applicationS  
• Switching Power Supply Smoothing (Input/Output)  
• Backlighting Inverters  
• DC/DC Converter Smoothing (Input/Output)  
• General Digital Circuits  
How to  
o
rder tanceram®  
Part number written: 100R15X106MV4E  
100  
R15  
X
106  
M
V
4
E
VOLTAGE  
SIZE  
DIELECTRIC  
CAPACITANCE  
TOLERANCE  
TERMINATION  
MARKING  
PACKING  
6R3 = 6.3 V  
100 = 10 V  
160 = 16 V  
250 = 25 V  
500 = 50 V  
101 = 100 V  
See Chart  
W = X7R  
X = X5R  
1st two digits are  
significant; third digit  
denotes number of  
zeros.  
K = 10ꢀ  
M = 20ꢀ  
V = Nickel Barrier  
with 100ꢀ Tin  
Plating (Matte)  
4 = Unmarked  
Code  
Type Reel  
E
T
Plastic 7”  
Paper 7”  
Tape specifications  
conform to EIA  
RS481  
T = SnPb*  
(*available on  
select parts)  
105 = 1.00 µF  
476 = 47.0 µF  
107 = 100 µF  
18  
www.johansondielectrics.com  

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