Datasheet > 6NM70-S

6NM70-S

更新时间： 2023-12-06 20:02:43

品牌	Logo	应用领域
友顺 - UTC		/
页数	文件大小	规格书
7页	235K
描述
N-CH

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数据手册

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6NM70-S 数据手册

6NM70-S

Preliminary

Power MOSFET



ABSOLUTE MAXIMUM RATINGS (T_C= 25°C, unless otherwise specified)

PARAMETER

SYMBOL

V_DSS

V_GSS

I_D

RATINGS

UNIT

Drain-Source Voltage

700

Gate-Source Voltage

±30

Continuous Drain Current

Pulsed Drain Current (Note 2)

Single Pulsed Avalanche Energy (Note 3)

Peak Diode Recovery dv/dt (Note 4)

SOT-223

6.0

I_DM

E_AS

132

V/ns

dv/dt

Power Dissipation

P_D

TO-220F/TO-220F1

TO-251/TO-252

Junction Temperature

Storage Temperature

T_J

+150

-55 ~ +150

°C

T_STG

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating: Pulse width limited by maximum junction temperature.

3. L = 120 mH, I_AS= 1.48A, V_DD= 50V, R_G= 25Ω, Starting T_J= 25°C

4. I_SD≤ 6.0A, di/dt ≤ 200A/µs, V_DD≤ BV_DSS, Starting T_J= 25°C



THERMAL DATA

PARAMETER

SOT-223

SYMBOL

RATING

150

UNIT

°C/W

Junction to Ambient

θ_JA

TO-220F/TO-220F1

TO-251/TO-252

SOT-223

62.5

110

Junction to Case

θ_JC

°C/W

TO-220F/TO-220F1

TO-251/TO-252

3.13

2.27

UNISONIC TECHNOLOGIES CO., LTD

3 of 7

QW-R205-332.a

www.unisonic.com.tw

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