Datasheet > 6NM65-FDQ

6NM65-FDQ

更新时间： 2023-12-06 20:03:14

品牌	Logo	应用领域
友顺 - UTC		/
页数	文件大小	规格书
6页	346K
描述
N-CH

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6NM65-FDQ 数据手册

6NM65-FDQ

Power MOSFET



ABSOLUTE MAXIMUM RATINGS (T_C= 25°С, unless otherwise specified)

PARAMETER

SYMBOL

V_DSS

RATINGS

650

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_GSS

±30

Continuous

I_D

Drain Current

Pulsed (Note 2)

I_DM

E_AS

dv/dt

P_D

200

V/ns

Avalanche Energy

Single Pulsed (Note 3)

Peak Diode Recovery dv/dt (Note 4)

Power Dissipation

Junction Temperature

T_J

+150

-55 ~ +150

°С

Storage Temperature

T_STG

°С

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating : Pulse width limited by maximum junction temperature.

3. L=100mH, I_AS=2.0A, V_DD=50V, R_G=25 ꢀ, Starting T_J= 25°C

4. I_SD≤6.0A, di/dt≤200A/μs, V_DD≤ BV_DSS, Starting T_J= 25°C



THERMAL DATA

PARAMETER

SYMBOL

θ_JA

RATINGS

110

UNIT

°С/W

Junction to Ambient

Junction to Case

θ_JC

2.27



ELECTRICAL CHARACTERISTICS (T_C=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

Drain-Source Leakage Current

BV_DSS

I_DSS

V_GS= 0V, I_D= 250μA

V_DS= 650V, V_GS= 0V

V_GS= 30V, V_DS= 0V

650

μA

Forward

Reverse

100 nA

-100 nA

Gate-Source Leakage Current

I_GSS

V_GS= -30V, V_DS= 0V

ON CHARACTERISTICS

Gate Threshold Voltage

V_GS(TH)

R_DS(ON)

V_DS= V_GS, I_D= 250μA

2.5

4.5

1.2

Static Drain-Source On-State Resistance

DYNAMIC CHARACTERISTICS

Input Capacitance

V_GS= 10V, I_D= 3.0A

ꢀ

C_ISS

C_OSS

C_RSS

340

280

V_GS=0V, V_DS=25V, f=1.0MHz

Output Capacitance

Reverse Transfer Capacitance

SWITCHING CHARACTERISTICS

Turn-ON Delay Time (Note 1)

Rise Time

t_D(ON)

t_R

t_D(OFF)

t_F

1.2

V_DD=300V, V_GS=10 V,

I_D=6.0A, R_G=25ꢀ (Note 1, 2)

Turn-OFF Delay Time

Fall-Time

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

Maximum Body-Diode Continuous Current

Maximum Body-Diode Pulsed Current

I_S

I_SM

V_SD

t_rr

1.4

Drain-Source Diode Forward Voltage (Note 1)

Body Diode Reverse Recovery Time (Note 1)

Body Diode Reverse Recovery Charge

I_S=6.0A, V_GS=0V

I_S=6.0A, V_GS=0V,

dI_F/dt=100A/µs

160

μC

Q_rr

Notes: 1. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%

2. Essentially independent of operating ambient temperature

UNISONIC TECHNOLOGIES CO., LTD

3 of 6

QW-R205-410.A

www.unisonic.com.tw

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