Datasheet > 6N60-CQ

6N60-CQ

更新时间： 2023-12-26 09:00:10

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N-CH

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6N60-CQ 数据手册

6N60-CQ

Preliminary

Power MOSFET



ABSOLUTE MAXIMUM RATINGS (T_C= 25°C, unless otherwise specified)

PARAMETER

SYMBOL

V_DSS

V_GSS

I_D

RATINGS

UNIT

Drain-Source Voltage

600

Gate-Source Voltage

±30

Continuous Drain Current

Pulsed Drain Current (Note 2)

I_DM

216

Avalanche Energy

Single Pulsed (Note 3)

E_AS

V/ns

Peak Diode Recovery dv/dt (Note 4)

Power Dissipation

dv/dt

P_D

Junction Temperature

Storage Temperature

T_J

+150

-55 ~ +150

°C

T_STG

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating: Pulse width limited by maximum junction temperature.

3. L = 12mH, I_AS= 6.0A, V_DD= 50V, R_G= 25 Ω, Starting T_J= 25°C

4. I_SD≤ 6.0A, di/dt ≤200A/μs, V_DD≤ BV_DSS, Starting T_J= 25°C



THERMAL DATA

PARAMETER

SYMBOL

θ_JA

RATING

62.5

UNIT

°C/W

Junction to Ambient

Junction to Case

θ_JC

3.2



ELECTRICAL CHARACTERISTICS (T_J=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

Drain-Source Leakage Current

BV_DSS

I_DSS

V_GS= 0V, I_D= 250μA

V_DS= 600V, V_GS= 0V

V_GS= 30V, V_DS= 0V

600

μA

Forward

Reverse

100 nA

-100 nA

Gate- Source Leakage Current

I_GSS

V_GS= -30V, V_DS= 0V

ON CHARACTERISTICS

Gate Threshold Voltage

V_GS(TH)V_DS= V_GS, I_D= 250μA

2.0

4.0

1.2

Static Drain-Source On-State Resistance

DYNAMIC CHARACTERISTICS

Input Capacitance

R_DS(ON)V_GS= 10V, I_D= 3.0A

Ω

C_ISS

940

250

V_DS=25V, V_GS=0V, f=1.0 MHz

Output Capacitance

C_OSS

C_RSS

Reverse Transfer Capacitance

SWITCHING CHARACTERISTICS

Total Gate Charge (Note 1)

Gate-Source Charge

Q_G

Q_GS

Q_GD

t_D(ON)

t_R

_DS=50V, V_GS=10V, I_D=1.3A,

I_D=100μA (Note 1, 2)

Gate-Drain Charge

Turn-On Delay Time (Note 1)

Turn-On Rise Time

V_DD=30V, V_GS=10V, I_D=0.5A,

128

272

178

R_G=25Ω (Note 1, 2)

Turn-Off Delay Time

t_D(OFF)

t_F

Turn-Off Fall Time

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

Maximum Continuous Drain-Source Diode

Forward Current

I_S

Maximum Pulsed Drain-Source Diode

Forward Current

I_SM

Drain-Source Diode Forward Voltage

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

V_SD

t_rr

I_S=6.0A , V_GS=0V

di/dt=100A/μs

1.4

320

μC

Q_rr

2.27

Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%

2. Essentially independent of operating temperature

UNISONIC TECHNOLOGIES CO., LTD

2 of 5

QW-R205-380.a

www.unisonic.com.tw

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