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6N137M PDF预览

6N137M

更新时间: 2024-02-18 11:47:27
品牌 Logo 应用领域
安森美 - ONSEMI 输出元件光电
页数 文件大小 规格书
18页 640K
描述
高速 10MB/s 逻辑门极光耦合器

6N137M 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliantHTS代码:8541.40.80.00
Factory Lead Time:10 weeks风险等级:5.72
光电设备类型:LOGIC IC OUTPUT OPTOCOUPLERBase Number Matches:1

6N137M 数据手册

 浏览型号6N137M的Datasheet PDF文件第3页浏览型号6N137M的Datasheet PDF文件第4页浏览型号6N137M的Datasheet PDF文件第5页浏览型号6N137M的Datasheet PDF文件第7页浏览型号6N137M的Datasheet PDF文件第8页浏览型号6N137M的Datasheet PDF文件第9页 
SingleChannel: 6N137M, HCPL2601M, HCPL2611M DualChannel: HCPL2630M,  
HCPL2631M  
ELECTRICAL CHARACTERISTICS (continued)  
Symbol  
Parameter  
Test Conditions  
Device  
Min  
Typ  
Max  
Unit  
SWITCHING CHARACTERISTICS (V = 5 V, I = 7.5 mA, T = 40°C to +85°C unless otherwise specified)  
CC  
F
A
|CM |  
Common Mode Transient  
Immunity at Logic Low  
V
A
= 50 V  
, R = 350 W,  
6N137M,  
10,000  
10,000  
V/ms  
L
CM  
PEAK  
L
T = 25°C (Note 11) (Figure 25)  
HCPL2630M  
HCPL2601M,  
HCPL2631M  
5000  
V
CM  
= 400 V  
, R = 350 W,  
HCPL2611M  
10,000 15,000  
PEAK  
L
T = 25°C (Note 11) (Figure 25)  
A
ISOLATION CHARACTERISTICS (T = 25°C, unless otherwise noted)  
A
V
ISO  
Withstand Insulation Test  
Voltage  
Relative Humidity 50%,  
10 mA, t = 1 min, f = 50 Hz  
All  
5,000  
VAC  
RMS  
I
IO  
(Note 12) (Note 13)  
11  
R
C
Resistance (Input to Output)  
V
= 500 V (Note 12)  
All  
All  
10  
W
IO  
IO  
IO  
DC  
Capacitance (Input to  
Output)  
f = 1 MHz, V  
= 0 V (Note 12)  
1
pF  
IO  
DC  
I
InputOutput Insulation  
Leakage Current  
Relative Humidity 45%,  
V = 3000 V , t = 5 s (Note 12)  
II  
All  
1.0  
mA  
IO  
DC  
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
4. Enable Input – No pull up resistor required as the device has an internal pull up resistor.  
5. t  
– Propagation delay is measured from the 3.75 mA level on the LOW to HIGH transition of the input current pulse to the 1.5 V level on  
PHL  
the HIGH to LOW transition of the output voltage pulse.  
6. t – Propagation delay is measured from the 3.75 mA level on the HIGH to LOW transition of the input current pulse to the 1.5 V level on  
PLH  
the LOW to HIGH transition of the output voltage pulse.  
7. t – Rise time is measured from the 10% to the 90% levels on the LOW to HIGH transition of the output pulse.  
R
8. t – Fall time is measured from the 90% to the 10% levels on the HIGH to LOW transition of the output pulse.  
F
EHL  
9. t  
– Enable input propagation delay is measured from the 1.5 V level on the LOW to HIGH transition of the input voltage pulse to the 1.5 V  
level on the HIGH to LOW transition of the output voltage pulse.  
10.t – Enable input propagation delay is measured from the 1.5 V level on the HIGH to LOW transition of the input voltage pulse to the 1.5 V  
ELH  
level on the LOW to HIGH transition of the output voltage pulse.  
11. Common mode transient immunity in logic high level is the maximum tolerable (positive) dV /dt on the leading edge of the common mode  
cm  
pulse signal, V , to assure that the output will remain in a logic high state (i.e., V > 2.0 V). Common mode transient immunity in logic low  
CM  
O
level is the maximum tolerable (negative) dV /dt on the trailing edge of the common mode pulse signal, V , to assure that the output will  
cm  
CM  
remain in a logic low state (i.e., V < 0.8 V).  
O
12.Device is considered a two terminal device: pins 1, 2, 3 and 4 are shorted together and pins 5, 6, 7 and 8 are shorted together.  
13.5000 VAC for 1 minute duration is equivalent to 6000 VAC for 1 second duration  
RMS  
RMS  
www.onsemi.com  
6
 

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