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6MBP50XBA120-50 PDF预览

6MBP50XBA120-50

更新时间: 2024-03-03 10:09:04
品牌 Logo 应用领域
富士电机 - FUJI
页数 文件大小 规格书
11页 1138K
描述
IPM(Inv.+Gate Driver) P626

6MBP50XBA120-50 数据手册

 浏览型号6MBP50XBA120-50的Datasheet PDF文件第1页浏览型号6MBP50XBA120-50的Datasheet PDF文件第2页浏览型号6MBP50XBA120-50的Datasheet PDF文件第4页浏览型号6MBP50XBA120-50的Datasheet PDF文件第5页浏览型号6MBP50XBA120-50的Datasheet PDF文件第6页浏览型号6MBP50XBA120-50的Datasheet PDF文件第7页 
6MBP50XBA120-50  
IGBT Modules  
Control circuit  
T vj=25°CV CC15V unless otherwise specified  
Item  
Supply current of P-side  
pre-driver (per one unit)  
Supply current of N-side  
pre-driver  
Symbol  
Conditions  
Switching frequency (f SW) = 015kHz  
C = -20125°C  
Min. Typ. Max. Units  
-
-
11  
mA  
Iccp  
T
-
-
29  
mA  
Iccn  
V inth(on)  
V inth(off)  
1.2 1.4 1.6  
1.5 1.7 1.9  
V
V
ON  
OFF  
V in-GND  
Input signal threshold voltage  
Protection circuit  
T vj=25°CV CC15V unless otherwise specified  
Item  
Symbol  
Conditions  
Min. Typ. Max. Units  
T vj=150°C  
75  
-
-
-
-
-
-
-
-
-
-
A
A
μs  
μs  
°C  
Over current  
protection level  
Inverter  
Brake  
IOC  
t dOC  
t dSC  
T vj=150°C  
T vj=150°C  
Surface of IGBT chips  
4.0  
1.0  
-
Over current protection delay time  
Short circuit protection delay time  
IGBT chips over heating  
protection temperature level  
Over heating protection hysteresis  
IGBT chips warning temperature level  
Warning hysteresis  
175  
T jOH  
T jH  
T jW  
T jWH  
V UV  
V H  
-
20  
-
10  
-
-
-
°C  
150  
-
11.0  
Surface of IGBT chips (Y)  
-
12.5  
-
V
V
Under voltage protection level  
Under voltage protection hysteresis  
0.2 0.5  
t ALM(OC)  
t ALM(UV)  
t ALM(TjOH)  
1.0 2.0 2.4  
3.5 4.0 4.5  
7.0 8.0 9.0  
T jw operating ~  
cancellation  
ms  
ms  
ms  
ALM-GND  
T C=-20125°C  
V
cc10V  
Alarm signal hold time  
WNG-GND  
T C=-20125°C  
t WNG  
Warning signal hold time  
ms  
V ALMH  
V WNGH  
R ALM  
Alarm signal voltage  
Warning signal voltage  
14.5  
14.5  
960  
960  
-
-
-
-
15.0  
15.0  
1570  
1570  
V
V
Ω
Ω
ALM-GND, without protection  
WNG-GND, without warning  
Resistance for current limit  
R WNG  
Thermal resistance characteristics (T = 25)  
C
Item  
Symbol  
R th(j-c)Q  
R th(j-c)D  
R th(j-c)Q  
R th(j-c)D  
R th(c-s)  
Min. Typ. Max. Units  
IGBT  
-
-
-
-
-
-
-
-
-
0.52 K/W  
0.75 K/W  
Thermal resistance  
junction to case  
*14  
Inverter  
Brake  
FWD  
IGBT  
FWD  
-
-
-
K/W  
K/W  
K/W  
0.05  
Thermal resistance case to heat sink *15  
*14:  
For 1 device the measurement point of the case is just under the chip.  
*15: This is the value which is defined mounting on the additional heat sink with 1 W/(m·K) thermal grease.  
Noise immunity (V =600V, V =15V)  
DC  
CC  
Item  
Conditions  
Pulse width 1μs,polarity ±,10min.  
Judgeno over-current, no miss operating  
Min. Typ. Max. Units  
±2.0 kV  
Common mode  
rectangular noise  
-
-
Recommended operating conditions  
Item  
Symbol  
V DC  
V CC  
f SW  
t dead  
-
Min. Typ. Max. Units  
-
-
800  
V
V
DC bus voltage  
13.5 15.0 16.5  
Power supply voltage of pre-driver  
Switching frequency of IPM  
Arm short through blocking time for IPM's input signal *16  
Screw torque (M4)  
-
-
-
-
20.0 kHz  
μs  
1.7 Nm  
1.5  
1.3  
-
t
dead = t off - t d(on)  
*16:  
FM6M1930b  
2023/03  
3

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