5秒后页面跳转
6MBP50VBA060-50 PDF预览

6MBP50VBA060-50

更新时间: 2024-02-16 12:49:49
品牌 Logo 应用领域
富士电机 - FUJI 双极性晶体管
页数 文件大小 规格书
8页 860K
描述
IGBT MODULE (V series) 600V / 50A / IPM

6MBP50VBA060-50 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.39.00.01
风险等级:5.74接口集成电路类型:BUFFER OR INVERTER BASED PERIPHERAL DRIVER
Base Number Matches:1

6MBP50VBA060-50 数据手册

 浏览型号6MBP50VBA060-50的Datasheet PDF文件第1页浏览型号6MBP50VBA060-50的Datasheet PDF文件第3页浏览型号6MBP50VBA060-50的Datasheet PDF文件第4页浏览型号6MBP50VBA060-50的Datasheet PDF文件第5页浏览型号6MBP50VBA060-50的Datasheet PDF文件第6页浏览型号6MBP50VBA060-50的Datasheet PDF文件第7页 
6MBP50VBA060-50  
IGBT Modules  
http://www.fujielectric.com/products/semiconductor/  
Electrical Characteristics (Tj=25ºC, VCC=15V unless otherwise specified)  
Items  
Collector Current at off signal input  
Symbol  
Conditions  
Min.  
Typ.  
Max.  
Units  
I
CES  
VCE=600V  
-
-
1.0  
2.00  
-
mA  
V
Terminal  
Chip  
-
-
Collector-Emitter saturation voltage  
Forward voltage of FWD  
V
V
CE(sat)  
I
I
C
=50A  
-
1.40  
V
Terminal  
Chip  
-
-
-
2.30  
-
V
F
F=50A  
1.80  
V
ton  
toff  
1.1  
-
-
-
-
µs  
µs  
V
DC=300V, Tj=125ºC  
Ic=50A  
2.1  
Switching time  
VDC=300V  
trr  
-
-
0.3  
µs  
IF=50A  
Supply current of P-side pre-driver (per one unit)  
Supply current of N-side pre-driver  
Iccp  
-
-
-
-
11  
34  
1.6  
1.9  
-
mA  
mA  
V
Switching Frequency= 0-15kHz  
Tc=-20~110ºC  
Iccn  
Vinth(on)  
Vinth(off)  
ON  
Vin-GND  
1.2  
1.5  
75  
-
1.4  
1.7  
-
Input signal threshold voltage  
OFF  
V
Over Current Protection Level  
IOC  
tdOC  
tSC  
Tj=125ºC  
A
Over Current Protection Delay time  
Short Circuit Protection Delay time  
Tj=125ºC  
5
-
µs  
µs  
ºC  
ºC  
V
Tj=125ºC  
-
2
3
IGBT Chips Over Heating Protection Temperature Level TjOH  
Surface of IGBT Chips  
150  
-
-
-
Over Heating Protection Hysteresis  
Under Voltage Protection Level  
T
jH  
20  
-
-
V
UV  
H
11.0  
0.2  
1.0  
2.5  
5.0  
960  
12.5  
-
Under Voltage Protection Hysteresis  
V
0.5  
2.0  
4.0  
8.0  
1265  
V
tALM(OC)  
tALM(UV)  
t
ALM(TjOH)  
2.4  
4.9  
11.0  
1570  
ms  
ms  
ms  
Ω
ALM-GND  
Tc=-20~110ºC  
Alarm Signal Hold Time  
VCC  
10V  
Resistance for current limit  
RALM  
Thermal Characteristics (T = 25ºC)  
C
Items  
Symbol  
Rth(j-c)Q  
Rth(j-c)D  
Rth(c-f)  
Min.  
Typ.  
Max.  
0.74  
1.27  
-
Units  
IGBT  
FWD  
-
-
-
-
-
°C/W  
°C/W  
°C/W  
Junction to Case Thermal Resistance (*10)  
Inverter  
Case to Fin Thermal Resistance with Compound  
0.05  
Note *10: For 1device, the measurement point of the case is just under the chip.  
Noise Immunity (VDC=300V, VCC=15V)  
Items  
Conditions  
Min.  
±2.0  
Typ.  
Max.  
Units  
Pulse width 1μs, polarity ±, 10 minute  
Judge : no over-current, no miss operating  
Common mode rectangular noise  
-
-
kV  
Recommended Operating Conditions  
Items  
Symbol  
Min.  
-
Typ.  
Max.  
400  
16.5  
-
Units  
V
DC Bus Voltage  
VDC  
-
Power Supply Voltage of Pre-Driver  
VCC  
13.5  
1.0  
1.3  
15.0  
V
Arm shoot through blocking time for IPM's input signal tdead  
Screw Torque (M4)  
-
-
µs  
-
1.7  
Nm  
2

与6MBP50VBA060-50相关器件

型号 品牌 描述 获取价格 数据表
6MBP50VBA120-50 FUJI IGBT MODULE (V series) 1200V / 50A / IPM

获取价格

6MBP50VDA060-50 FUJI IGBT MODULE (V series) 600V / 50A / IPM

获取价格

6MBP50VDA120-50 FUJI IGBT MODULE (V series) 1200V / 50A / IPM

获取价格

6MBP50VDN120-50 FUJI IPM(Inv.+Gate Driver) P630

获取价格

6MBP50VFN060-50 FUJI IPM(Inv.+Gate Driver) P636

获取价格

6MBP50VFN120-50 FUJI IPM(Inv.+Gate Driver)

获取价格