Datasheet > 6MBP20XSF060-50

6MBP20XSF060-50

更新时间： 2024-04-09 19:00:12

品牌	Logo	应用领域
富士电机 - FUJI		栅
页数	文件大小	规格书
18页	2008K
描述
IPM(Inv.+Gate Driver) P633A

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6MBP20XSF060-50 数据手册

6MBP20XSF060-50

IGBT Modules

Absolute Maximum Ratings (T =25℃,T =25℃,V =15V unless otherwise specified)

■

Items

DC bus voltage

Symbol

Conditions

450

Unit

Remarks

V _DC

Note*1

V _IN=0V

Note*2

V _DC(surge)

V _CE(chip)

I_C

Bus voltage (surge)

Collector-Emitter voltage

Collector current

500

600

_CC≧15V,V _B(*)≧15V

Note*2,*3,*4

_CC≧13V,V _B(*)≧13V

I_CP

Peak collector current

Note*2,*3,*4

I_F

Note*2

Forward current

I_FP

Note*2

Peak diode forward current

Collector power dissipation

FWD power dissipation

Virtual junction temperature

per single IGBT T _C=25℃

per single FWD T _C=25℃

P _{D_IGBT}

P _{D_FWD}

T _vj

41.0

27.8

150

°C

Operating virtual junction temperature

(under switching conditions)

Note*8

T _v

-40～＋150

°C

jop

V _CCH

Applied between VCCH-COM

Applied between VCCL-COM

Applied between

High-side supply voltage

Low-side supply voltage

-0.5～20

V _CCL

V _VB(U)-COM

V _VB(V)-COM

V _VB(W)-COM

V _B(U)

High-side bias absolute voltage

-0.5～620

-0.5～20

-5～600

VB(U)-COM,VB(V)-COM,

VB(W)-COM

High-side bias voltage for IGBT gate

driving

V _B(V)

Note*4

V _B(W)

V _U

Applied between

U-COM,V-COM,W-COM

Note*5

V _V

High-side bias offset voltage

Input signal voltage

V _W

-0.5～V _CCH+0.5

-0.5～V _CCL+0.5

V _IN

Note*6

I_IN

sink current

Input signal current

V _FO

I_FO

V _IS

T _vj

-0.5～V_CCL+0.5

Applied between VFO-COM

sink current

Fault signal voltage

Fault signal current

Over current sensing input voltage

Virtual junction temperature

-0.5～V _CCL+0.5

150

Applied between IS-COM

°C

T _C

-40～+125

See Fig.1-1

Operating case temperature

Storage temperature

T _stg

Sine wave,60Hz

V _isol

Isolation voltage

AC1500

Vrms

t = 1min,Note*7

1696i

2022/05

123 4 5 6 7...18

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