Datasheet > 6MBP20XSF060-50

6MBP20XSF060-50

更新时间： 2024-04-09 19:00:12

品牌	Logo	应用领域
富士电机 - FUJI		栅
页数	文件大小	规格书
18页	2008K
描述
IPM(Inv.+Gate Driver) P633A

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6MBP20XSF060-50 数据手册

6MBP20XSF060-50

IGBT Modules

Recommend operation conditions(Note*17)

■

Description

Symbol

min.

Unit

typ.

max

400.0

V _DC

300.0

DC bus voltage

V _B(*)

13.0

13.5

-1

15.0

18.5

High-side bias voltage for IGBT gate driving

High-side supply voltage

V _CCH

V _CCL

ΔV _B

ΔV _CC

V _IN

15.0

16.5

15.0

16.5

Low-side supply voltage

Control supply variation (under swiching conditions)

V/s

-1

Input signal voltage

V _IS

Voltage for current sensing

V _{COM_N}

t _DEAD

I_O

-5

Potential difference of between COM to N （including surge)

Dead time for preventing arm-short (T _C125°C)

Output current (Note*14)

1.0

s

16.0

A rms

s

PW _IN(on)

PW _IN(off)

f _PWM

T _vjop

0.5

0.7

Minimum input pulse widht (Note*15,Note*16)

s

150

kHz

°C

PWM input frequency

-30

Operating virtual junction temperature

1696i

2022/05

1...4 5 678 9 10...18

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